Influence of ion mixing on the depth resolution of sputter depth profiling

Yang Tse Cheng, Audrey A. Dow, Bruce M. Clemens, Eun Hee Cirlin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

During sputter depth profiling, the bombarding ions for sputtering also produce ion mixing at interfaces. As a result, ion bombardment changes the original composition profile of the specimen, setting a limit on the depth resolution of the sputter depth profiling technique. The origin and magnitude of the effect of ion mixing on the depth resolution of sputter depth profiling have been studied using x-ray photoelectron spectroscopy, Auger electron spectroscopy, and Ar+sputter depth profiling of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the effect of ion mixing is an intrinsic limitation on the depth resolution; it depends on the thermodynamic properties, such as the heat of mixing and the cohesive energy, of the solids under examination. The magnitude of the effect of ion mixing is compared with that of the instrument-dependent limitations on the depth resolution of sputter depth profiling.

Original languageEnglish
Pages (from-to)1641-1645
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - May 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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