Abstract
We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.
Original language | English |
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Title of host publication | 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
Pages | 2519-2521 |
Number of pages | 3 |
ISBN (Electronic) | 9781728161150 |
DOIs | |
State | Published - Jun 14 2020 |
Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: Jun 15 2020 → Aug 21 2020 |
Publication series
Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
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Volume | 2020-June |
ISSN (Print) | 0160-8371 |
Conference
Conference | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
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Country/Territory | Canada |
City | Calgary |
Period | 6/15/20 → 8/21/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
Funding
Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University.
Funders | Funder number |
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Indiana State University | |
Duke Energy Foundation | |
Colorado Society for Respiratory Care |
Keywords
- CZTSe
- Ge
- Impedance
- kesterite
- modeling
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering