Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy

Sanghyun Lee, Kent J. Price, Edgardo Saucedo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Pages2519-2521
Number of pages3
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period6/15/208/21/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

  • CZTSe
  • Ge
  • Impedance
  • kesterite
  • modeling

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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