Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy

Sanghyun Lee, Kent J. Price, Edgardo Saucedo

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations


    We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.

    Original languageEnglish
    Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
    Number of pages3
    ISBN (Electronic)9781728161150
    StatePublished - Jun 14 2020
    Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
    Duration: Jun 15 2020Aug 21 2020

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371


    Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

    Bibliographical note

    Funding Information:
    Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University.

    Publisher Copyright:
    © 2020 IEEE.


    • CZTSe
    • Ge
    • Impedance
    • kesterite
    • modeling

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering


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