Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy

Sanghyun Lee; Kent J. Price; Edgardo Saucedo

doi:10.1109/PVSC45281.2020.9300607

Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy

Sanghyun Lee, Kent J. Price, Edgardo Saucedo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.

Original language	English
Title of host publication	2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Pages	2519-2521
Number of pages	3
ISBN (Electronic)	9781728161150
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300607
State	Published - Jun 14 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: Jun 15 2020 → Aug 21 2020

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2020-June
ISSN (Print)	0160-8371

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	6/15/20 → 8/21/20

Bibliographical note

Funding Information:
Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University.

Publisher Copyright:
© 2020 IEEE.

Keywords

CZTSe
Ge
Impedance
kesterite
modeling

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC45281.2020.9300607

Cite this

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title = "Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy",

abstract = "We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.",

keywords = "CZTSe, Ge, Impedance, kesterite, modeling",

author = "Sanghyun Lee and Price, {Kent J.} and Edgardo Saucedo",

note = "Funding Information: Authors acknowledges the generous support by the Duke Energy Foundation and CSRC at Indiana State University. Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

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doi = "10.1109/PVSC45281.2020.9300607",

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Lee, S, Price, KJ & Saucedo, E 2020, Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy. in 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020., 9300607, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2020-June, pp. 2519-2521, 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 6/15/20. https://doi.org/10.1109/PVSC45281.2020.9300607

Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy. / Lee, Sanghyun; Price, Kent J.; Saucedo, Edgardo.
2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. 2020. p. 2519-2521 9300607 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We introduce a spectral response of impedance of CZTSe nanoscale Ge bi-layers solar cells with an improved equivalent circuit model. Improved AC circuit models are applied, considering a realistic device structure with lumped bulk resistance, resistance, and capacitance of one heterojunction interface, and two effective back-contact interfaces. The impedance model is characterized by series/parallel resistance, and constant phase element to accurately analyze the device structure, which shows a good agreement of the fitting to data (\chi^{2}=4.19\ \times\ 10^{-4}). Two indicative parameters of back-contact interfaces are close to 1, implying the improved back-contact interface by adding nanolayer Ge (2.5 nm) between CZTSe and MoSe2. Resistances of both back-contact interfaces are less than 0.3% of the CdS/CZTSe heterojunction interfaces.

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Interface models of CZTSe: Ge bilayers solar cells with Impedance Spectroscopy

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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