Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

D. G. Park; D. M. Diatezua; Z. Chen; S. N. Mohammad; H. Morkoc

Interface properties of Si₃N₄/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

D. G. Park, D. M. Diatezua, Z. Chen, S. N. Mohammad, H. Morkoc

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present characteristics of Al/Si₃N₄Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques. The density of the surface states in the high 10¹⁰ eV^-1 cm^-2 near the GaAs midgap for the GaAs grown at 575 °C and 625 °C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625 °C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

Original language	English
Pages (from-to)	327-331
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	448
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{0a2da78d5e9a4176a1160efd3df926e5,

title = "Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate",

abstract = "We present characteristics of Al/Si3N4Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques. The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575 °C and 625 °C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625 °C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.",

author = "Park, {D. G.} and Diatezua, {D. M.} and Z. Chen and Mohammad, {S. N.} and H. Morkoc",

year = "1997",

language = "English",

volume = "448",

pages = "327--331",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 05-12-1996",

}

TY - JOUR

T1 - Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

AU - Park, D. G.

AU - Diatezua, D. M.

AU - Chen, Z.

AU - Mohammad, S. N.

AU - Morkoc, H.

PY - 1997

Y1 - 1997

N2 - We present characteristics of Al/Si3N4Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques. The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575 °C and 625 °C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625 °C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

AB - We present characteristics of Al/Si3N4Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques. The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575 °C and 625 °C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625 °C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

UR - http://www.scopus.com/inward/record.url?scp=0030689273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030689273&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030689273

SN - 0272-9172

VL - 448

SP - 327

EP - 331

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 5 December 1996

ER -

Interface properties of Si₃N₄/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

Abstract

ASJC Scopus subject areas

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