Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C. Hoffman; Terry McAfee; Brad R. Conrad; Marsha A. Loth; John E. Anthony; Harald W. Ade; Daniel B. Dougherty

doi:10.1021/acsami.6b03886

Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C. Hoffman, Terry McAfee, Brad R. Conrad, Marsha A. Loth, John E. Anthony, Harald W. Ade, Daniel B. Dougherty

Chemistry

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO₂ and silane-treated SiO₂ substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO₂ than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

Original language	English
Pages (from-to)	21490-21496
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	33
DOIs	https://doi.org/10.1021/acsami.6b03886
State	Published - Aug 24 2016

Bibliographical note

Funding Information:
Film growth and scanned probe microscopy was funded by NSF CAREER award DMR-1056861, and GIWAXS measurements at the Advanced Light Source were funded by the U.S. Department of Energy, OS BES, MSE (DE-FG02-98ER45737). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Special thanks to beamline 7.3.3 Staff Alexander Hexemer and Eric Schaible for help with data acquisition and maintenance. Material synthesis was supported by the National Science Foundation (CMMI-1255494).

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

Kelvin probe force microscopy
anthradithiophene
charge traps
organic electronics
thin films

ASJC Scopus subject areas

Materials Science (all)

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10.1021/acsami.6b03886

Cite this

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abstract = "Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.",

keywords = "Kelvin probe force microscopy, anthradithiophene, charge traps, organic electronics, thin films",

author = "Hoffman, {Benjamin C.} and Terry McAfee and Conrad, {Brad R.} and Loth, {Marsha A.} and Anthony, {John E.} and Ade, {Harald W.} and Dougherty, {Daniel B.}",

note = "Funding Information: Film growth and scanned probe microscopy was funded by NSF CAREER award DMR-1056861, and GIWAXS measurements at the Advanced Light Source were funded by the U.S. Department of Energy, OS BES, MSE (DE-FG02-98ER45737). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Special thanks to beamline 7.3.3 Staff Alexander Hexemer and Eric Schaible for help with data acquisition and maintenance. Material synthesis was supported by the National Science Foundation (CMMI-1255494). Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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AU - Conrad, Brad R.

AU - Loth, Marsha A.

AU - Anthony, John E.

AU - Ade, Harald W.

AU - Dougherty, Daniel B.

N1 - Funding Information: Film growth and scanned probe microscopy was funded by NSF CAREER award DMR-1056861, and GIWAXS measurements at the Advanced Light Source were funded by the U.S. Department of Energy, OS BES, MSE (DE-FG02-98ER45737). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Special thanks to beamline 7.3.3 Staff Alexander Hexemer and Eric Schaible for help with data acquisition and maintenance. Material synthesis was supported by the National Science Foundation (CMMI-1255494). Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/8/24

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N2 - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

AB - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

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KW - anthradithiophene

KW - charge traps

KW - organic electronics

KW - thin films

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Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Abstract

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Keywords

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