TY - JOUR
T1 - Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films
AU - Hoffman, Benjamin C.
AU - McAfee, Terry
AU - Conrad, Brad R.
AU - Loth, Marsha A.
AU - Anthony, John E.
AU - Ade, Harald W.
AU - Dougherty, Daniel B.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/8/24
Y1 - 2016/8/24
N2 - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.
AB - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.
KW - Kelvin probe force microscopy
KW - anthradithiophene
KW - charge traps
KW - organic electronics
KW - thin films
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U2 - 10.1021/acsami.6b03886
DO - 10.1021/acsami.6b03886
M3 - Article
AN - SCOPUS:84983479571
SN - 1944-8244
VL - 8
SP - 21490
EP - 21496
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 33
ER -