Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.
|Number of pages||7|
|Journal||ACS Applied Materials and Interfaces|
|State||Published - Aug 24 2016|
Bibliographical noteFunding Information:
Film growth and scanned probe microscopy was funded by NSF CAREER award DMR-1056861, and GIWAXS measurements at the Advanced Light Source were funded by the U.S. Department of Energy, OS BES, MSE (DE-FG02-98ER45737). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Special thanks to beamline 7.3.3 Staff Alexander Hexemer and Eric Schaible for help with data acquisition and maintenance. Material synthesis was supported by the National Science Foundation (CMMI-1255494).
© 2016 American Chemical Society.
- Kelvin probe force microscopy
- charge traps
- organic electronics
- thin films
ASJC Scopus subject areas
- Materials Science (all)