Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C. Hoffman; Terry McAfee; Brad R. Conrad; Marsha A. Loth; John E. Anthony; Harald W. Ade; Daniel B. Dougherty

doi:10.1021/acsami.6b03886

Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C. Hoffman, Terry McAfee, Brad R. Conrad, Marsha A. Loth, John E. Anthony, Harald W. Ade, Daniel B. Dougherty

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO₂ and silane-treated SiO₂ substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO₂ than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

Original language	English
Pages (from-to)	21490-21496
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	33
DOIs	https://doi.org/10.1021/acsami.6b03886
State	Published - Aug 24 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Funding

Film growth and scanned probe microscopy was funded by NSF CAREER award DMR-1056861, and GIWAXS measurements at the Advanced Light Source were funded by the U.S. Department of Energy, OS BES, MSE (DE-FG02-98ER45737). The Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Special thanks to beamline 7.3.3 Staff Alexander Hexemer and Eric Schaible for help with data acquisition and maintenance. Material synthesis was supported by the National Science Foundation (CMMI-1255494).

Funders	Funder number
OS BES
National Science Foundation (NSF)	CMMI-1255494, DMR-1056861, 1056861
Michigan State University-U.S. Department of Energy (MSU-DOE) Plant Research Laboratory
Office of Science Programs
Office of Basic Energy Sciences	DE-AC02-05CH11231
David O. McKay School of Education, Brigham Young University	DE-FG02-98ER45737

Keywords

Kelvin probe force microscopy
anthradithiophene
charge traps
organic electronics
thin films

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.6b03886

Cite this

@article{fbcd1c7df48146cf97d56d08b83f5fb7,

title = "Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films",

abstract = "Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.",

keywords = "Kelvin probe force microscopy, anthradithiophene, charge traps, organic electronics, thin films",

author = "Hoffman, {Benjamin C.} and Terry McAfee and Conrad, {Brad R.} and Loth, {Marsha A.} and Anthony, {John E.} and Ade, {Harald W.} and Dougherty, {Daniel B.}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = aug,

day = "24",

doi = "10.1021/acsami.6b03886",

language = "English",

volume = "8",

pages = "21490--21496",

number = "33",

}

TY - JOUR

T1 - Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

AU - Hoffman, Benjamin C.

AU - McAfee, Terry

AU - Conrad, Brad R.

AU - Loth, Marsha A.

AU - Anthony, John E.

AU - Ade, Harald W.

AU - Dougherty, Daniel B.

PY - 2016/8/24

Y1 - 2016/8/24

N2 - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

AB - Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

KW - Kelvin probe force microscopy

KW - anthradithiophene

KW - charge traps

KW - organic electronics

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84983479571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983479571&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b03886

DO - 10.1021/acsami.6b03886

M3 - Article

AN - SCOPUS:84983479571

SN - 1944-8244

VL - 8

SP - 21490

EP - 21496

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 33

ER -

Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this