Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films

Benjamin C. Hoffman, Terry McAfee, Brad R. Conrad, Marsha A. Loth, John E. Anthony, Harald W. Ade, Daniel B. Dougherty

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.

Original languageEnglish
Pages (from-to)21490-21496
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number33
DOIs
StatePublished - Aug 24 2016

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Keywords

  • Kelvin probe force microscopy
  • anthradithiophene
  • charge traps
  • organic electronics
  • thin films

ASJC Scopus subject areas

  • General Materials Science

Fingerprint

Dive into the research topics of 'Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films'. Together they form a unique fingerprint.

Cite this