Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors

Kimberly C. Dickey; Sankar Subramanian; John E. Anthony; Li Hsin Han; Shaochen Chen; Yueh Lin Loo

doi:10.1063/1.2748841

Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors

Kimberly C. Dickey
, Sankar Subramanian
, John E. Anthony
, Li Hsin Han
, Shaochen Chen
, Yueh Lin Loo

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

We describe two techniques for patterning spin-cast thin films of a solution-processable organic semiconductor, triethylsilylethylnyl anthradithiophene (TES ADT), to eliminate parasitic leakage currents and to lower off currents in thin-film transistors. One technique utilizes UV light in the presence of solvent vapors to simultaneously define the active channel and to crystallize TES ADT. The second technique selectively removes TES ADT from the nonchannel regions of the thin-film transistors through direct contact with a poly(dimethylsiloxane) stamp. Both patterning techniques yield thin-film transistors with high charge-carrier mobility (0.1 cm2 V s), low off currents (10-10 - 10-11 A), and minimal parasitic leakage.

Original language	English
Article number	244103
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2748841
State	Published - 2007

Bibliographical note

Funding Information:
(Y.L.L.) gratefully acknowledges funding from the Camille & Henry Dreyfus New Faculty Award, the National Science Foundation (DMR-0314707), the Keck Foundation, Ricoh Innovations, and the Texas Higher Education Coordinating Board. (J.E.A.) acknowledges support from the Office of Naval Research and (S.C.C.) is thankful for financial support from a Young Investigator Award from the Office of Naval Research.

Funding

(Y.L.L.) gratefully acknowledges funding from the Camille & Henry Dreyfus New Faculty Award, the National Science Foundation (DMR-0314707), the Keck Foundation, Ricoh Innovations, and the Texas Higher Education Coordinating Board. (J.E.A.) acknowledges support from the Office of Naval Research and (S.C.C.) is thankful for financial support from a Young Investigator Award from the Office of Naval Research.

Funders	Funder number
Ricoh Innovations
National Science Foundation (NSF)	DMR-0314707
Office of Naval Research
W. M. Keck Foundation
Camille and Henry Dreyfus Foundation
Texas Higher Education Coordinating Board Advanced Technology Program

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2748841

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title = "Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors",

abstract = "We describe two techniques for patterning spin-cast thin films of a solution-processable organic semiconductor, triethylsilylethylnyl anthradithiophene (TES ADT), to eliminate parasitic leakage currents and to lower off currents in thin-film transistors. One technique utilizes UV light in the presence of solvent vapors to simultaneously define the active channel and to crystallize TES ADT. The second technique selectively removes TES ADT from the nonchannel regions of the thin-film transistors through direct contact with a poly(dimethylsiloxane) stamp. Both patterning techniques yield thin-film transistors with high charge-carrier mobility (0.1 cm2 V s), low off currents (10-10 - 10-11 A), and minimal parasitic leakage.",

author = "Dickey, \{Kimberly C.\} and Sankar Subramanian and Anthony, \{John E.\} and Han, \{Li Hsin\} and Shaochen Chen and Loo, \{Yueh Lin\}",

note = "Funding Information: (Y.L.L.) gratefully acknowledges funding from the Camille \& Henry Dreyfus New Faculty Award, the National Science Foundation (DMR-0314707), the Keck Foundation, Ricoh Innovations, and the Texas Higher Education Coordinating Board. (J.E.A.) acknowledges support from the Office of Naval Research and (S.C.C.) is thankful for financial support from a Young Investigator Award from the Office of Naval Research. ",

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T1 - Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors

AU - Dickey, Kimberly C.

AU - Subramanian, Sankar

AU - Anthony, John E.

AU - Han, Li Hsin

AU - Chen, Shaochen

AU - Loo, Yueh Lin

N1 - Funding Information: (Y.L.L.) gratefully acknowledges funding from the Camille & Henry Dreyfus New Faculty Award, the National Science Foundation (DMR-0314707), the Keck Foundation, Ricoh Innovations, and the Texas Higher Education Coordinating Board. (J.E.A.) acknowledges support from the Office of Naval Research and (S.C.C.) is thankful for financial support from a Young Investigator Award from the Office of Naval Research.

PY - 2007

Y1 - 2007

N2 - We describe two techniques for patterning spin-cast thin films of a solution-processable organic semiconductor, triethylsilylethylnyl anthradithiophene (TES ADT), to eliminate parasitic leakage currents and to lower off currents in thin-film transistors. One technique utilizes UV light in the presence of solvent vapors to simultaneously define the active channel and to crystallize TES ADT. The second technique selectively removes TES ADT from the nonchannel regions of the thin-film transistors through direct contact with a poly(dimethylsiloxane) stamp. Both patterning techniques yield thin-film transistors with high charge-carrier mobility (0.1 cm2 V s), low off currents (10-10 - 10-11 A), and minimal parasitic leakage.

AB - We describe two techniques for patterning spin-cast thin films of a solution-processable organic semiconductor, triethylsilylethylnyl anthradithiophene (TES ADT), to eliminate parasitic leakage currents and to lower off currents in thin-film transistors. One technique utilizes UV light in the presence of solvent vapors to simultaneously define the active channel and to crystallize TES ADT. The second technique selectively removes TES ADT from the nonchannel regions of the thin-film transistors through direct contact with a poly(dimethylsiloxane) stamp. Both patterning techniques yield thin-film transistors with high charge-carrier mobility (0.1 cm2 V s), low off currents (10-10 - 10-11 A), and minimal parasitic leakage.

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Large-area patterning of a solution-processable organic semiconductor to reduce parasitic leakage and off currents in thin-film transistors

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