Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

Zhi Chen; Pangleen Ong; Chandan B. Samantaray

doi:10.1109/ISDRS.2007.4422242

Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

Zhi Chen, Pangleen Ong, Chandan B. Samantaray

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422242
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422242

Cite this

@inproceedings{68a9cd65025a4b888a1a7884865e58f3,

title = "Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect",

author = "Zhi Chen and Pangleen Ong and Samantaray, {Chandan B.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422242",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Chen, Z, Ong, P & Samantaray, CB 2007, Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422242, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422242

Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect. / Chen, Zhi; Ong, Pangleen; Samantaray, Chandan B.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422242 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

AU - Chen, Zhi

AU - Ong, Pangleen

AU - Samantaray, Chandan B.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949111548&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949111548&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422242

DO - 10.1109/ISDRS.2007.4422242

M3 - Conference contribution

AN - SCOPUS:44949111548

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Large leakage current reduction of silicon oxide and high-K oxides using the phonon-energy-coupling enhancement effect

Publication series

Conference

ASJC Scopus subject areas

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