Lateral heating of SiO 2/Si: Interfacial Si structure change causing tunneling current reduction

Zhi Chen, Pang Leen Ong, Yichun Wang, Lei Han

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.

Original languageEnglish
Article number171602
JournalApplied Physics Letters
Volume100
Issue number17
DOIs
StatePublished - Apr 23 2012

Bibliographical note

Funding Information:
This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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