Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.
|Journal||Applied Physics Letters|
|State||Published - Apr 23 2012|
Bibliographical noteFunding Information:
This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)