Lateral heating of SiO 2/Si: Interfacial Si structure change causing tunneling current reduction

Zhi Chen; Pang Leen Ong; Yichun Wang; Lei Han

doi:10.1063/1.4709418

Lateral heating of SiO ₂/Si: Interfacial Si structure change causing tunneling current reduction

Zhi Chen, Pang Leen Ong, Yichun Wang, Lei Han

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Lateral heating processing of SiO ₂/Si samples can reduce the tunneling current of SiO ₂ by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO ₂/Si interface.

Original language	English
Article number	171602
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4709418
State	Published - Apr 23 2012

Bibliographical note

Funding Information:
This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4709418

Cite this

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title = "Lateral heating of SiO 2/Si: Interfacial Si structure change causing tunneling current reduction",

abstract = "Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.",

author = "Zhi Chen and Ong, {Pang Leen} and Yichun Wang and Lei Han",

note = "Funding Information: This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).",

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language = "English",

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T2 - Interfacial Si structure change causing tunneling current reduction

AU - Chen, Zhi

AU - Ong, Pang Leen

AU - Wang, Yichun

AU - Han, Lei

N1 - Funding Information: This research was supported by National Science Foundation (EPS-0447479 and ECCS 0609064).

PY - 2012/4/23

Y1 - 2012/4/23

N2 - Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.

AB - Lateral heating processing of SiO 2/Si samples can reduce the tunneling current of SiO 2 by 5 orders of magnitude with very good reproducibility. There is a strong correlation between the flatband voltage shift of metal-oxide-semiconductor capacitors and the tunneling current reduction. Analysis of the flatband voltage shift suggests that origin of the tunneling current reduction after lateral heating is caused by the structure change of Si, most likely tensor strained Si, near the SiO 2/Si interface.

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