Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Shi Bin Li; Hong Ping Yu; Ting Zhang; Zhi Chen; Zhi Ming Wu

doi:10.1088/1674-1056/23/10/107101

Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Shi Bin Li, Hong Ping Yu, Ting Zhang, Zhi Chen, Zhi Ming Wu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 10¹⁴ cm^-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

Original language	English
Article number	107101
Journal	Chinese Physics B
Volume	23
Issue number	10
DOIs	https://doi.org/10.1088/1674-1056/23/10/107101
State	Published - Oct 1 2014

Bibliographical note

Publisher Copyright:
© 2014 Chinese Physical Society and IOP Publishing Ltd.

Keywords

AlGaN
Ohmic contact
carrier concentration
polarization

ASJC Scopus subject areas

Physics and Astronomy (all)

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10.1088/1674-1056/23/10/107101

Cite this

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title = "Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction",

abstract = "High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.",

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T1 - Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

AU - Li, Shi Bin

AU - Yu, Hong Ping

AU - Zhang, Ting

AU - Chen, Zhi

AU - Wu, Zhi Ming

PY - 2014/10/1

Y1 - 2014/10/1

N2 - High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

AB - High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

KW - AlGaN

KW - Ohmic contact

KW - carrier concentration

KW - polarization

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JO - Chinese Physics B

JF - Chinese Physics B

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ER -

Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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