Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

Shi Bin Li, Hong Ping Yu, Ting Zhang, Zhi Chen, Zhi Ming Wu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6× 1014 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650 °C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

Original languageEnglish
Article number107101
JournalChinese Physics B
Issue number10
StatePublished - Oct 1 2014

Bibliographical note

Publisher Copyright:
© 2014 Chinese Physical Society and IOP Publishing Ltd.


  • AlGaN
  • Ohmic contact
  • carrier concentration
  • polarization

ASJC Scopus subject areas

  • Physics and Astronomy (all)


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