TY - JOUR
T1 - Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition
AU - Hunter, By Simon
AU - Ward, Jeremy W.
AU - Payne, Marcia M.
AU - Anthony, John E.
AU - Jurchescu, Oana D.
AU - Anthopoulos, Thomas D.
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%-60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at -4 V operation, and unipolar inverters operating at -6 V are demonstrated.
AB - Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%-60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at -4 V operation, and unipolar inverters operating at -6 V are demonstrated.
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U2 - 10.1063/1.4922194
DO - 10.1063/1.4922194
M3 - Article
AN - SCOPUS:84930959173
SN - 0003-6951
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 22
M1 - 223304
ER -