Magnetic, and electronic properties of a Ba3InRu2O9 single crystal

L. Shlyk; S. Kryukov; V. Durairaj; S. Parkin; G. Cao; L. E. De Long

doi:10.1016/j.jmmm.2007.04.033

Magnetic, and electronic properties of a Ba₃InRu₂O₉ single crystal

L. Shlyk, S. Kryukov, V. Durairaj, S. Parkin, G. Cao, L. E. De Long

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The magnetic and transport properties of a Ba₃InRu₂O₉ single crystal are reported. Ba₃InRu₂O₉ crystallizes in a hexagonal BaTiO₃ structure, consisting of face-sharing RuO₆ octahedra interconnected by corner-sharing InO₆ octahedra. The Ru₂^{4.5 +} O₉ dimers form S = frac(1, 2) spins on a distorted hexagonal lattice that frustrates antiferromagnetic interdimer interactions and results in a spin-glass transition at T_g=3.5 K. The compound is a semiconductor that exhibits variable-range hopping as the transport mechanism in the temperature range 140-600 K.

Original language	English
Pages (from-to)	64-68
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	319
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jmmm.2007.04.033
State	Published - Dec 2007

Bibliographical note

Funding Information:
This work was in part supported by NSF grant DMR-0552267 and DoE Grant DE-FG02-97IR45653.

Funding

This work was in part supported by NSF grant DMR-0552267 and DoE Grant DE-FG02-97IR45653.

Funders	Funder number
National Science Foundation (NSF)	DMR-0552267, DE-FG02-97IR45653

Keywords

Magnetic properties
Ruthenate
Spin glass

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2007.04.033

Cite this

@article{535757acfb6e49558002bff04222d777,

title = "Magnetic, and electronic properties of a Ba3InRu2O9 single crystal",

abstract = "The magnetic and transport properties of a Ba3InRu2O9 single crystal are reported. Ba3InRu2O9 crystallizes in a hexagonal BaTiO3 structure, consisting of face-sharing RuO6 octahedra interconnected by corner-sharing InO6 octahedra. The Ru24.5 + O9 dimers form S = frac(1, 2) spins on a distorted hexagonal lattice that frustrates antiferromagnetic interdimer interactions and results in a spin-glass transition at Tg=3.5 K. The compound is a semiconductor that exhibits variable-range hopping as the transport mechanism in the temperature range 140-600 K.",

keywords = "Magnetic properties, Ruthenate, Spin glass",

author = "L. Shlyk and S. Kryukov and V. Durairaj and S. Parkin and G. Cao and \{De Long\}, \{L. E.\}",

note = "Funding Information: This work was in part supported by NSF grant DMR-0552267 and DoE Grant DE-FG02-97IR45653.",

year = "2007",

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doi = "10.1016/j.jmmm.2007.04.033",

language = "English",

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T1 - Magnetic, and electronic properties of a Ba3InRu2O9 single crystal

AU - Shlyk, L.

AU - Kryukov, S.

AU - Durairaj, V.

AU - Parkin, S.

AU - Cao, G.

AU - De Long, L. E.

N1 - Funding Information: This work was in part supported by NSF grant DMR-0552267 and DoE Grant DE-FG02-97IR45653.

PY - 2007/12

Y1 - 2007/12

N2 - The magnetic and transport properties of a Ba3InRu2O9 single crystal are reported. Ba3InRu2O9 crystallizes in a hexagonal BaTiO3 structure, consisting of face-sharing RuO6 octahedra interconnected by corner-sharing InO6 octahedra. The Ru24.5 + O9 dimers form S = frac(1, 2) spins on a distorted hexagonal lattice that frustrates antiferromagnetic interdimer interactions and results in a spin-glass transition at Tg=3.5 K. The compound is a semiconductor that exhibits variable-range hopping as the transport mechanism in the temperature range 140-600 K.

AB - The magnetic and transport properties of a Ba3InRu2O9 single crystal are reported. Ba3InRu2O9 crystallizes in a hexagonal BaTiO3 structure, consisting of face-sharing RuO6 octahedra interconnected by corner-sharing InO6 octahedra. The Ru24.5 + O9 dimers form S = frac(1, 2) spins on a distorted hexagonal lattice that frustrates antiferromagnetic interdimer interactions and results in a spin-glass transition at Tg=3.5 K. The compound is a semiconductor that exhibits variable-range hopping as the transport mechanism in the temperature range 140-600 K.

KW - Magnetic properties

KW - Ruthenate

KW - Spin glass

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