Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

I. C. Kizilyalli; G. Abeln; Z. Chen; G. Weber; F. Register; E. Harris; S. Chetlur; G. Higashi; M. Schofieled; S. Sen; B. Kotzias; P. K. Roy; J. Lyding; K. Hess

doi:10.1117/12.323960

Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

I. C. Kizilyalli, G. Abeln, Z. Chen, G. Weber, F. Register, E. Harris, S. Chetlur, G. Higashi, M. Schofieled, S. Sen, B. Kotzias, P. K. Roy, J. Lyding, K. Hess

Research output: Contribution to journal › Conference article › peer-review

Abstract

An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.

Original language	English
Pages (from-to)	141-146
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3506
DOIs	https://doi.org/10.1117/12.323960
State	Published - 1998
Event	Microelectronic Device Technology II - Santa Clara, CA, United States Duration: Sep 23 1998 → Sep 24 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.323960

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Kizilyalli, I. C., Abeln, G., Chen, Z., Weber, G., Register, F., Harris, E., Chetlur, S., Higashi, G., Schofieled, M., Sen, S., Kotzias, B., Roy, P. K., Lyding, J., & Hess, K. (1998). Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability. Proceedings of SPIE - The International Society for Optical Engineering, 3506, 141-146. https://doi.org/10.1117/12.323960

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title = "Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability",

abstract = "An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.",

author = "Kizilyalli, {I. C.} and G. Abeln and Z. Chen and G. Weber and F. Register and E. Harris and S. Chetlur and G. Higashi and M. Schofieled and S. Sen and B. Kotzias and Roy, {P. K.} and J. Lyding and K. Hess",

year = "1998",

doi = "10.1117/12.323960",

language = "English",

volume = "3506",

pages = "141--146",

note = "Microelectronic Device Technology II ; Conference date: 23-09-1998 Through 24-09-1998",

}

Kizilyalli, IC, Abeln, G, Chen, Z, Weber, G, Register, F, Harris, E, Chetlur, S, Higashi, G, Schofieled, M, Sen, S, Kotzias, B, Roy, PK, Lyding, J & Hess, K 1998, 'Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability', Proceedings of SPIE - The International Society for Optical Engineering, vol. 3506, pp. 141-146. https://doi.org/10.1117/12.323960

TY - JOUR

T1 - Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

AU - Kizilyalli, I. C.

AU - Abeln, G.

AU - Chen, Z.

AU - Weber, G.

AU - Register, F.

AU - Harris, E.

AU - Chetlur, S.

AU - Higashi, G.

AU - Schofieled, M.

AU - Sen, S.

AU - Kotzias, B.

AU - Roy, P. K.

AU - Lyding, J.

AU - Hess, K.

PY - 1998

Y1 - 1998

N2 - An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.

AB - An overview is given of the first demonstration of the large hydrogen/deuterium isotope effect and an optimized deuterium anneal process for manufacturing multi-level metal/dielectric MOS systems resulting in 50-100 fold improvement in channel hot carrier lifetime. The proposed deuterium post-metal anneal process is suitable for manufacturing high performance CMOS products and fully compatible with traditional integrated circuit processes.

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U2 - 10.1117/12.323960

DO - 10.1117/12.323960

M3 - Conference article

AN - SCOPUS:0038326935

SN - 0277-786X

VL - 3506

SP - 141

EP - 146

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Microelectronic Device Technology II

Y2 - 23 September 1998 through 24 September 1998

ER -

Manufacturing multi-level metal CMOS with deuterium for improved hot carrier reliability

Abstract

ASJC Scopus subject areas

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