Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

Zhi Chen

doi:10.1063/1.2820383

Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

Zhi Chen

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Large leakage-current reduction of Si O2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of Si O2 at T> Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T< Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T> Tc. This leads to reduced leakage current.

Original language	English
Article number	223513
Journal	Applied Physics Letters
Volume	91
Issue number	22
DOIs	https://doi.org/10.1063/1.2820383
State	Published - 2007

Bibliographical note

Funding Information:
This research was supported by National Science Foundation (EPS-0447479). The author is grateful to Dr. C. B. Samantaray for assistance in experiments. The author also thanks Dr. M. J. Kim and Dr. R. M. Wallace of University of Texas at Dallas for TEM imaging and Dr. Zsolt Nenyei of Mattson Technology Co. for providing oxynitiride wafers.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{875beedb78504544b4c8afbdc909cf66,

title = "Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon",

abstract = "Large leakage-current reduction of Si O2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of Si O2 at T> Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T< Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T> Tc. This leads to reduced leakage current.",

author = "Zhi Chen",

note = "Funding Information: This research was supported by National Science Foundation (EPS-0447479). The author is grateful to Dr. C. B. Samantaray for assistance in experiments. The author also thanks Dr. M. J. Kim and Dr. R. M. Wallace of University of Texas at Dallas for TEM imaging and Dr. Zsolt Nenyei of Mattson Technology Co. for providing oxynitiride wafers. ",

year = "2007",

doi = "10.1063/1.2820383",

language = "English",

volume = "91",

number = "22",

}

TY - JOUR

T1 - Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

AU - Chen, Zhi

N1 - Funding Information: This research was supported by National Science Foundation (EPS-0447479). The author is grateful to Dr. C. B. Samantaray for assistance in experiments. The author also thanks Dr. M. J. Kim and Dr. R. M. Wallace of University of Texas at Dallas for TEM imaging and Dr. Zsolt Nenyei of Mattson Technology Co. for providing oxynitiride wafers.

PY - 2007

Y1 - 2007

N2 - Large leakage-current reduction of Si O2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of Si O2 at T> Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T< Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T> Tc. This leads to reduced leakage current.

AB - Large leakage-current reduction of Si O2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of Si O2 at T> Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T< Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T> Tc. This leads to reduced leakage current.

UR - http://www.scopus.com/inward/record.url?scp=36549079017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549079017&partnerID=8YFLogxK

U2 - 10.1063/1.2820383

DO - 10.1063/1.2820383

M3 - Article

AN - SCOPUS:36549079017

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223513

ER -

Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

Abstract

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