Large leakage-current reduction of Si O2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of Si O2 at T> Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T< Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T> Tc. This leads to reduced leakage current.
|Journal||Applied Physics Letters|
|State||Published - 2007|
Bibliographical noteFunding Information:
This research was supported by National Science Foundation (EPS-0447479). The author is grateful to Dr. C. B. Samantaray for assistance in experiments. The author also thanks Dr. M. J. Kim and Dr. R. M. Wallace of University of Texas at Dallas for TEM imaging and Dr. Zsolt Nenyei of Mattson Technology Co. for providing oxynitiride wafers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)