Microindentation of ground silicon wafers

Fuqian Yang, Peixing Fei

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The near-surface deformation behaviour of ground silicon wafers was determined by using microindentation technique. Surface softening phenomenon was observed during the indentation, which was due to the formation and propagation of subsurface damage. The residual indentation depth increases with the subsurface damage introduced in the lapping process, while the reduced contact modulus decreased with increasing the subsurface damage. An empirical relation was used to correlate the reduced contact modulus to the subsurface damage in the ground silicon wafers. This could provide a simple approach to characterize the subsurface damage by using the microindentation technique.

Original languageEnglish
Pages (from-to)1165-1168
Number of pages4
JournalSemiconductor Science and Technology
Issue number9
StatePublished - Sep 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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