Abstract
There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that combines quantum chemistry and traditional electrostatic calculations is used to explore various physical effects that can influence barrier heights in such systems. Nonidealities such as silicon surface states can influence both the potential profile within the device and the validity of the extracted barrier height. Our devices exhibit low surface state densities, but the magnitude of surface potential modulation is modest due to molecular depolarization from the gold contact.
| Original language | English |
|---|---|
| Article number | 024505 |
| Journal | Journal of Applied Physics |
| Volume | 107 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2010 |
Bibliographical note
Funding Information:The authors would like to thank Avik Ghosh and Smitha Vasudevan for helpful discussion. This work is supported by NSF (Grant No. ECE0506802), NASA-URETI (Grant No. NCC3-1363), DoD MURI program, and the Office of Naval Research. A.S. was supported by a NSF Graduate Research Fellowship.
ASJC Scopus subject areas
- General Physics and Astronomy