MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film

Chi Lu; Zhi Chen

doi:10.1016/j.ijhydene.2010.08.031

MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO₂ film

Chi Lu, Zhi Chen

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO₂/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO₂ film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t_50%, was only 4 s in response to 1% H ₂ without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H ₂). Based on the hydrogen-binding to the traps in the bulk SiO ₂, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO₂. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H₂ detectors with very fast responses.

Original language	English
Pages (from-to)	12561-12567
Number of pages	7
Journal	International Journal of Hydrogen Energy
Volume	35
Issue number	22
DOIs	https://doi.org/10.1016/j.ijhydene.2010.08.031
State	Published - Nov 2010

Bibliographical note

Funding Information:
This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.

Keywords

H sensor
MOS capacitor
Response time
SiO bulk trap
Ultra-thin thermal SiO film

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.ijhydene.2010.08.031

Cite this

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title = "MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film",

abstract = "An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50%, was only 4 s in response to 1% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.",

keywords = "H sensor, MOS capacitor, Response time, SiO bulk trap, Ultra-thin thermal SiO film",

author = "Chi Lu and Zhi Chen",

note = "Funding Information: This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.",

year = "2010",

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AU - Lu, Chi

AU - Chen, Zhi

N1 - Funding Information: This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.

PY - 2010/11

Y1 - 2010/11

N2 - An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50%, was only 4 s in response to 1% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.

AB - An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50%, was only 4 s in response to 1% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.

KW - H sensor

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KW - Ultra-thin thermal SiO film

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