MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film

Chi Lu; Zhi Chen

doi:10.1016/j.ijhydene.2010.08.031

MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO₂ film

Chi Lu
, Zhi Chen

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO₂/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO₂ film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t_50%, was only 4 s in response to 1% H ₂ without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H ₂). Based on the hydrogen-binding to the traps in the bulk SiO ₂, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO₂. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H₂ detectors with very fast responses.

Original language	English
Pages (from-to)	12561-12567
Number of pages	7
Journal	International Journal of Hydrogen Energy
Volume	35
Issue number	22
DOIs	https://doi.org/10.1016/j.ijhydene.2010.08.031
State	Published - Nov 2010

Bibliographical note

Funding Information:
This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.

Funding

This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.

Funders	Funder number
U.S. Department of Energy EPSCoR	DE-FG26-04NT42171
National Science Foundation Arctic Social Science Program	ECS-0609064

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

H sensor
MOS capacitor
Response time
SiO bulk trap
Ultra-thin thermal SiO film

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Fuel Technology
Condensed Matter Physics
Energy Engineering and Power Technology

Access to Document

10.1016/j.ijhydene.2010.08.031

Cite this

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title = "MOS hydrogen sensor with very fast response based on ultra-thin thermal SiO2 film",

abstract = "An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50\%, was only 4 s in response to 1\% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1\% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.",

keywords = "H sensor, MOS capacitor, Response time, SiO bulk trap, Ultra-thin thermal SiO film",

author = "Chi Lu and Zhi Chen",

note = "Funding Information: This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.",

year = "2010",

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AU - Lu, Chi

AU - Chen, Zhi

N1 - Funding Information: This research work was supported by the Department of Energy (DE-FG26-04NT42171) and National Science Foundation (ECS-0609064). We thank Dr. Shibin Li and Ms. Jing Guo for technical assistance.

PY - 2010/11

Y1 - 2010/11

N2 - An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50%, was only 4 s in response to 1% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.

AB - An MOS capacitor-type hydrogen gas sensor was fabricated with the structure of Ni/SiO2/Si by using conventional silicon wafer technologies. Grown by dry oxidation at 900°C, the thickness of the SiO2 film was only 24 . At 150°C, comparing to another MOS capacitor with 148 -thick oxide and otherwise identical configurations, this sensor showed much faster response speed (the time interval to reach half of the magnitude of the steady-state signal, or t50%, was only 4 s in response to 1% H 2 without deduction of the delay from the gas delivery system), as well as enhanced signal magnitude (about two times of the former for 1% H 2). Based on the hydrogen-binding to the traps in the bulk SiO 2, a mechanism was proposed to explain the very short response time on the device with the ultra-thin SiO2. The gate leakage in the device is also discussed. The presented sensor demonstrates a promising step in designing low-cost H2 detectors with very fast responses.

KW - H sensor

KW - MOS capacitor

KW - Response time

KW - SiO bulk trap

KW - Ultra-thin thermal SiO film

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