Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation in organic semiconductors. Avoided level crossing data on tert-butyl-ethynyl anthradithiophene, tri-methyl-silyl-ethynyl anthradithiophene and tri-ethygermyl-ethynyl anthradithiophene at different temperatures are presented. This series of molecules have an identical anthradithiophene backbone, but we have performed a targeted substitution on the central atom of the two side groups, of C, Si and Ge. We extracted the electron spin relaxation for the three molecules of this series and discuss them in the context of previously published results.
|Number of pages||4|
|State||Published - Dec 20 2014|
Bibliographical noteFunding Information:
AJD would like to acknowledge financial support from the UK Engineering and Physical Sciences Research Council, grant number EP/G054568/1, the European Union Seventh Framework Programme project NMP3-SL-2011-263104 ‘HINTS’ and the European Research Council project ‘Muon Spin Spectroscopy of Excited States (MuSES)’ proposal number 307593. SZ and LS acknowledge financial support from the National Science Foundation of China, grant numbers 61307039 and 61404088.
© 2015 Elsevier B.V. All rights reserved.
- Muon spin relaxation
- Organic semiconductors
- Spin relaxation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry