TY - JOUR
T1 - Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon
AU - Zhang, Peng
AU - Li, Shibin
AU - Liu, Chunhua
AU - Wei, Xiongbang
AU - Wu, Zhiming
AU - Jiang, Yadong
AU - Chen, Zhi
N1 - Publisher Copyright:
© 2014, Zhang et al.; licensee Springer.
PY - 2014
Y1 - 2014
N2 - Abstract: Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device.PACS: 78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi.
AB - Abstract: Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device.PACS: 78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi.
KW - Absorption
KW - Ag nanoparticles
KW - Black silicon
KW - Chemical etching
KW - LSP
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U2 - 10.1186/1556-276X-9-519
DO - 10.1186/1556-276X-9-519
M3 - Article
AN - SCOPUS:84919934592
SN - 1931-7573
VL - 9
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 519
ER -