TY - JOUR
T1 - New precursors to group 13 nitrides
AU - Hill, Michael
AU - Jegier, Jolin
AU - Munoz-Hernandez, Miguel Angel
AU - Rutherford, Drew
AU - Singer, Amy
AU - Atwood, David
PY - 1997
Y1 - 1997
N2 - In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, RnM(tet)3-n (n = 0, 1, 2) and Bn2MN3 (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)3 → MN + N2 + PhCN (1) Bn2MN3 → MN + N2 + Bn2 (2).
AB - In searching for ideal unimolecular precursors to group 13 nitrides we have begun examining two new classes of molecules having the formulae, RnM(tet)3-n (n = 0, 1, 2) and Bn2MN3 (where M = A1, Ga; tet = 5-phenyl-1H-tetrazole, and Bn= benzyl). These may be anticipated to undergo low-temperature decompositions according to equations 1 and 2, respectively. The absence of carbon bonds to the nitrogen ultimately incorporated into the material, as well as the presence of excess nitrogen are viewed as particularly advantageous. Preliminary results focused on the formation of aluminum nitride are presented herein. M(tet)3 → MN + N2 + PhCN (1) Bn2MN3 → MN + N2 + Bn2 (2).
KW - Aluminum nitride
KW - Precursor
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U2 - 10.1080/10426509708545623
DO - 10.1080/10426509708545623
M3 - Article
AN - SCOPUS:0006840080
SN - 1042-6507
VL - 124
SP - 183
EP - 192
JO - Phosphorus, Sulfur and Silicon and Related Elements
JF - Phosphorus, Sulfur and Silicon and Related Elements
ER -