An optical spectroscopic method, to monitor NiAs-type MnAs (α-MnAs) nanocrystals in (Ga, Mn)As diluted magnetic semiconductors, was presented. Mn ion implantation of low temperature (LT) GaAs epitaxial thin films followed by rapid thermal annealing (RTA) was utilized to yield embedded ferromagnetic α-MnAs nanoclusters in a GaAs:Mn matrix. It was observed that in optical spectra, the annealed samples showed resonant absorption at 0.9 eV photon energy, which was due to resonant surface plasma oscillation of spherical metallic phases embedded in LT GaAs. The metallic clusters in LT GaAs were identified as α-MnAs nanocrystals by comparing them with Maxwell-Garnett theory based simulations.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|State||Published - Jun 15 2004|
ASJC Scopus subject areas
- Physics and Astronomy (all)