On the inversion in GaAs metal-insulator-semiconductor heterostructures

Zhi Chen, S. Noor Mohammad, Dae Gyu Park, Hadis Morkoç, Yia Chung Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We report the discovery that the [111] strained Si (∼ 10 Å) as an interlayer between Si3N4 and (111) GaAs may allow the Fermi level to fully scan the GaAs conduction band and induce inversion electrons in GaAs. The band structure calculations indicate that the strained Si on (111) GaAs or (111) AlGaAs has a much wider band gap (0.87 eV) than the strained Si on (001) GaAs (0.34 eV). The energy levels in the quantum well formed by Si3N4/Si/(111)GaAs are almost unconfined and those of Si3N4/Si/Al0.3Ga0.7AS/(111)GaAs are confined, but the confined energy level in Si conduction band is ∼0.1 eV higher than the GaAs conduction band. Both structures may induce inversion electrons in GaAs potentially paving the way for the realization of GaAs based n-channel inversion mode metal-insulator-semiconductor transistors.

Original languageEnglish
Pages (from-to)228-230
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - Jan 13 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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