Abstract
The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from `hot carrier injection.' We report three new experiments that use the deuterium isotope effect to probe the mechanism for interface trap generation in n-MOS transistors in the presence of hot hole and electron injection. These experiments show clearly that hot carrier injection into the gate oxide exhibits essentially no isotope effect, whereas channel hot electrons at the interface exhibit a large isotope effect. This leads to the conclusion that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot carrier stressing.
| Original language | English |
|---|---|
| Pages (from-to) | 24-26 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 21 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2000 |
Bibliographical note
Funding Information:Manuscript received June 10, 1999; revised September, 14, 1999. This work was supported by the Office of Naval Research under Grants N0014-97-1-0587 and N00015-92-J-1519 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. The review of this letter was arranged by Editor D. J. Dumin.
Funding
Manuscript received June 10, 1999; revised September, 14, 1999. This work was supported by the Office of Naval Research under Grants N0014-97-1-0587 and N00015-92-J-1519 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. The review of this letter was arranged by Editor D. J. Dumin.
| Funders | Funder number |
|---|---|
| Office of Naval Research | N0014-97-1-0587, N00015-92-J-1519 |
| Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana-Champaign |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering