Abstract
Novel In1.94Sn0.06O3 (ITO)/amorphous SiOx coreshell structures were successfully synthesized by simple thermal evaporation. Studies indicated that the coreshell structures typically consisted of a core of crystalline, ITO nanowires surrounded by a shell of amorphous, SiOx tubular structures. We proposed a gold-catalyzed, vaporliquidsolid process as the dominant mechanism for the growth of the core ITO nanowires, whereas SiOx was grown in a tubular structure by a simultaneous and dynamic process. The possible reason for the preferential formation of the SiOx shells on the outside of the coreshell structures, is discussed. In regard to the core/shell structures, three emission peaks of 2.73, 3.06, and 1.65 eV were observed in the room-temperature photoluminescence measurements, and were attributed to the SiOx shell.
Original language | English |
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Pages (from-to) | 2490-2495 |
Number of pages | 6 |
Journal | Journal of Solid State Chemistry |
Volume | 183 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2010 |
Keywords
- Growth mechanism
- ITO
- Nanowires
- Photoluminescence
- Silica
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry