TY - JOUR
T1 - Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
AU - Zhang, Ting
AU - Liu, Bohan
AU - Ahmad, Waseem
AU - Xuan, Yaoyu
AU - Ying, Xiangxiao
AU - Liu, Zhijun
AU - Chen, Zhi
AU - Li, Shibin
N1 - Publisher Copyright:
© 2017, The Author(s).
PY - 2017
Y1 - 2017
N2 - Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.
AB - Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.
KW - Hyperdoped silicon
KW - Ion-implantation
KW - NIR photoresponse
UR - http://www.scopus.com/inward/record.url?scp=85028999953&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028999953&partnerID=8YFLogxK
U2 - 10.1186/s11671-017-2287-2
DO - 10.1186/s11671-017-2287-2
M3 - Article
AN - SCOPUS:85028999953
SN - 1931-7573
VL - 12
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 522
ER -