Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Ting Zhang; Bohan Liu; Waseem Ahmad; Yaoyu Xuan; Xiangxiao Ying; Zhijun Liu; Zhi Chen; Shibin Li

doi:10.1186/s11671-017-2287-2

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Ting Zhang, Bohan Liu, Waseem Ahmad, Yaoyu Xuan, Xiangxiao Ying, Zhijun Liu, Zhi Chen, Shibin Li

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n⁺/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 10¹⁴ ions/cm² has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

Original language	English
Article number	522
Journal	Nanoscale Research Letters
Volume	12
DOIs	https://doi.org/10.1186/s11671-017-2287-2
State	Published - 2017

Bibliographical note

Funding Information:
We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore−Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-A*STAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions.

Funding Information:
We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-ASTAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions.

Publisher Copyright:
© 2017, The Author(s).

Keywords

Hyperdoped silicon
Ion-implantation
NIR photoresponse

ASJC Scopus subject areas

Materials Science (all)
Condensed Matter Physics

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10.1186/s11671-017-2287-2

Cite this

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title = "Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes",

abstract = "Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.",

keywords = "Hyperdoped silicon, Ion-implantation, NIR photoresponse",

author = "Ting Zhang and Bohan Liu and Waseem Ahmad and Yaoyu Xuan and Xiangxiao Ying and Zhijun Liu and Zhi Chen and Shibin Li",

note = "Funding Information: We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore−Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-A*STAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions. Funding Information: We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-ASTAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions. Publisher Copyright: {\textcopyright} 2017, The Author(s).",

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doi = "10.1186/s11671-017-2287-2",

language = "English",

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AU - Zhang, Ting

AU - Liu, Bohan

AU - Ahmad, Waseem

AU - Xuan, Yaoyu

AU - Ying, Xiangxiao

AU - Liu, Zhijun

AU - Chen, Zhi

AU - Li, Shibin

N1 - Funding Information: We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore−Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-A*STAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions. Funding Information: We acknowledge funding from the National Research Foundation Singapore (NRF) Program no. NRF-CRP14-2014-03 and through the Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program. S.C. and R.A. acknowledge Carl Tryggers Stiftelse for Vetenskaplig Forskning and Swedish Research Council. N.M. acknowledges the funding support from NTU-ASTAR Silicon Technologies Centre of Excellence under the program grant no. 11235100003 and MOE Tier 1 grant RG184/14. We thank Dr. Thomas Baikie and Mr. Dinatakurti Sri Harsha Satya Sai for valuable discussions regarding combinatorial screening methodologies and Dr. Daymond Koh Teck Ming and Dr. Sjoerd Veldhius for schematic drawings and valuable discussions. Publisher Copyright: © 2017, The Author(s).

PY - 2017

Y1 - 2017

N2 - Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

AB - Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

KW - Hyperdoped silicon

KW - Ion-implantation

KW - NIR photoresponse

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ER -

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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