Abstract
The optical property and injection efficiency of N-face AlGaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face AlGaN based UV-LEDs. A staircase electron injector is introduced in the N-face AlGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.
| Original language | English |
|---|---|
| Article number | 108502 |
| Journal | Chinese Physics Letters |
| Volume | 31 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1 2014 |
Bibliographical note
Publisher Copyright:© 2014 Chinese Physical Society and IOP Publishing Ltd.
Funding
| Funders | Funder number |
|---|---|
| National Natural Science Foundation of China (NSFC) |
ASJC Scopus subject areas
- General Physics and Astronomy