Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

Do Hun Kwak; Hyun Ho Choi; John E. Anthony; Seunghyun Kim; Huijeong Chae; Jinhyun Hwang; Shichoon Lee; Hui Joon Park; Bong Gi Kim; Wi Hyoung Lee

doi:10.1016/j.orgel.2020.105878

Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

Do Hun Kwak, Hyun Ho Choi, John E. Anthony, Seunghyun Kim, Huijeong Chae, Jinhyun Hwang, Shichoon Lee, Hui Joon Park, Bong Gi Kim, Wi Hyoung Lee

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO₂ gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO₂ with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.

Original language	English
Article number	105878
Journal	Organic Electronics
Volume	85
DOIs	https://doi.org/10.1016/j.orgel.2020.105878
State	Published - Oct 2020

Bibliographical note

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

5,11-bis(triethylsilylethynyl)anthradithiophene
Gas-sensing properties
Gate-bias stability
Insulating polymer
Micro-strip
Organic field-effect transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2020.105878

Cite this

Kwak, D. H., Choi, H. H., Anthony, J. E., Kim, S., Chae, H., Hwang, J., Lee, S., Park, H. J., Kim, B. G., & Lee, W. H. (2020). Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer. Organic Electronics, 85, Article 105878. https://doi.org/10.1016/j.orgel.2020.105878

@article{915e56011c3e453e893e057387818c8c,

title = "Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer",

abstract = "The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO2 gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO2 with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.",

keywords = "5,11-bis(triethylsilylethynyl)anthradithiophene, Gas-sensing properties, Gate-bias stability, Insulating polymer, Micro-strip, Organic field-effect transistor",

author = "Kwak, {Do Hun} and Choi, {Hyun Ho} and Anthony, {John E.} and Seunghyun Kim and Huijeong Chae and Jinhyun Hwang and Shichoon Lee and Park, {Hui Joon} and Kim, {Bong Gi} and Lee, {Wi Hyoung}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = oct,

doi = "10.1016/j.orgel.2020.105878",

language = "English",

volume = "85",

}

TY - JOUR

T1 - Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

AU - Kwak, Do Hun

AU - Choi, Hyun Ho

AU - Anthony, John E.

AU - Kim, Seunghyun

AU - Chae, Huijeong

AU - Hwang, Jinhyun

AU - Lee, Shichoon

AU - Park, Hui Joon

AU - Kim, Bong Gi

AU - Lee, Wi Hyoung

PY - 2020/10

Y1 - 2020/10

N2 - The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO2 gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO2 with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.

AB - The control of the microstructure and patterning of 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) film is essential for high-performance TES-ADT field-effect transistors (FETs) as a NO2 gas sensor. In this study, a binary blend film based on TES-ADT and insulating polymer was annealed by solvent vapor with patterned PDMS molds. The solvent-containing PDMS mold led to the TES-ADT crystallization under the phase-separation between TES-ADT and PMMA. This resulted in highly crystalline micro-strip films where TES-ADT and the insulating polymer were phase-separated on top and bottom, respectively. The micro-strip structures can have superior gas sensor performance because they have additional gas diffusion paths compared to non-patterned structures. Initial investigations to clarify morphology and microstructure of the films revealed that lateral phase separation got dominant with increasing the portion of the insulating polymer. The blended films were then used as the active layer in the FET-based gas sensors. The use of blended films instead of non-blended TES-ADT film in FETs is advantageous in reducing both the threshold voltage and subthreshold slope while compromising the field-effect mobility. The sensing response as the gas sensors is slightly lower in the blended TES-ADT FET than in the non-blended TES-ADT FET. However, the utilization of blended films significantly enhanced the bias-stress stability. Accordingly, a uniform baseline of the sensor performance was achieved in TES-ADT: insulating polymer blended FETs. This trend was in contrast to an abrupt decrease in the sensing signals of the non-blended TES-ADT FETs. The enhanced bias stability of the blended FETs was exhibited as a result of covering the silanol groups in SiO2 with a phase-separated insulating polymer. Our results provide a route for to the optimization of bias stability and response in TES-ADT micro-strip gas sensors through the application of a one-step blend technology.

KW - 5,11-bis(triethylsilylethynyl)anthradithiophene

KW - Gas-sensing properties

KW - Gate-bias stability

KW - Insulating polymer

KW - Micro-strip

KW - Organic field-effect transistor

UR - http://www.scopus.com/inward/record.url?scp=85087714022&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85087714022&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2020.105878

DO - 10.1016/j.orgel.2020.105878

M3 - Article

AN - SCOPUS:85087714022

SN - 1566-1199

VL - 85

JO - Organic Electronics

JF - Organic Electronics

M1 - 105878

ER -

Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this