Origin of the Hydrogen/Deuterium (H/D) isotope effect of hot-electron degradation of MOS devices

Zhi Chen, Jun Guo, Pangleen Ong

Research output: Contribution to journalConference articlepeer-review


In order to verify Van de Walle and Jackson's theory on the isotope effect of the Si-H/D bonds resistant to hot-electron excitation [Appl. Phys. Lett., 69, 2441 (1996)], we measured the Si-H, Si-D, and other vibrational modes in oxidized silicon wafers annealed in hydrogen and deuterium using Fourier Transform Infrared (FTIR) spectrometry. Our PTIR data suggest that the frequency for the Si-D bending mode at the SiO2/Si interface is 490 cm -1. Our experimental data support Van de Walle and Jackson's theory with some modification. Their theory is correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope (STM) where no oxide is involved. In the SiO2/Si case, the de-excitation of the Si-D bond may be due to the energy coupling from the Si-D bending mode to two vibrational modes; i.e., the Si-O TO mode and the Si-Si TO phonon mode. Van de Walle and Jackson only pointed out coupling to the Si-Si TO phonon mode. The strongest coupling might happen between the Si-D mode and the Si-O TO mode. Therefore, the oxide may play a crucial role in energy dissipation of the Si-D bond in metal-oxide-semiconductor (MOS) devices.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2004
EventHydrogen in Semiconductors - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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