Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet, J. Todd Hastings, Henry I. Smith

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

Original languageEnglish
Pages (from-to)2499-2503
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
StatePublished - Nov 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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