TY - JOUR
T1 - Performance of the Raith 150 electron-beam lithography system
AU - Goodberlet, James G.
AU - Hastings, J. Todd
AU - Smith, Henry I.
PY - 2001/11
Y1 - 2001/11
N2 - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.
AB - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.
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U2 - 10.1116/1.1414018
DO - 10.1116/1.1414018
M3 - Article
AN - SCOPUS:0035519213
SN - 1071-1023
VL - 19
SP - 2499
EP - 2503
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 6
ER -