Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet; J. Todd Hastings; Henry I. Smith

doi:10.1116/1.1414018

Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet
, J. Todd Hastings
, Henry I. Smith

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

Original language	English
Pages (from-to)	2499-2503
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1414018
State	Published - Nov 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1414018

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title = "Performance of the Raith 150 electron-beam lithography system",

abstract = "The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.",

author = "Goodberlet, \{James G.\} and Hastings, \{J. Todd\} and Smith, \{Henry I.\}",

year = "2001",

month = nov,

doi = "10.1116/1.1414018",

language = "English",

volume = "19",

pages = "2499--2503",

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T1 - Performance of the Raith 150 electron-beam lithography system

AU - Goodberlet, James G.

AU - Hastings, J. Todd

AU - Smith, Henry I.

PY - 2001/11

Y1 - 2001/11

N2 - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

AB - The Raith 150's resolution, stability, intrafield distortion, overlay and stitching performance were examined. Patterning at low- and high-acceleration voltages were compared. The highest patterning resolution and pattern-placement performance were obtained for acceleration voltages above 20 kV. Pattern-placement accuracy below 20 nm, mean plus standard deviation, was demonstrated.

UR - https://www.scopus.com/pages/publications/0035519213

UR - https://www.scopus.com/pages/publications/0035519213#tab=citedBy

U2 - 10.1116/1.1414018

DO - 10.1116/1.1414018

M3 - Article

AN - SCOPUS:0035519213

SN - 1071-1023

VL - 19

SP - 2499

EP - 2503

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Performance of the Raith 150 electron-beam lithography system

Abstract

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