Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors

Zhi Chen; Jun Guo

doi:10.1109/RELPHY.2006.251351

Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors

Zhi Chen, Jun Guo

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO₂/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors.

Original language	English
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	739-740
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251351
State	Published - 2006
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: Mar 26 2006 → Mar 30 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/Territory	United States
City	San Jose, CA
Period	3/26/06 → 3/30/06

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/RELPHY.2006.251351

Cite this

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title = "Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors",

abstract = "The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO2/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors.",

author = "Zhi Chen and Jun Guo",

year = "2006",

doi = "10.1109/RELPHY.2006.251351",

language = "English",

isbn = "0780394992",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "739--740",

booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",

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Chen, Z & Guo, J 2006, Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017292, IEEE International Reliability Physics Symposium Proceedings, pp. 739-740, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 3/26/06. https://doi.org/10.1109/RELPHY.2006.251351

Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors. / Chen, Zhi; Guo, Jun.
2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 739-740 4017292 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when RTP is applied to the SiO2/Si system. When applying this effect to the MOS transistors, we observed dramatic reliability improvement of MOS devices. The breakdown voltage of the gate oxide (10-20 nm) has been improved by 40%. The hot-electron related lifetime of MOS transistors has been improved by 100 times over the deuterium-annealed transistors.

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Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors

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