Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO 2/Si system

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


We report a new effect for the SiO2 Si system, phonon-energy-coupling enhancement. The vibrational modes of the Si-Si and Si-O bonds exhibit enhanced energy coupling when the rapid thermal processing (RTP) is directly applied to the SiO2 Si system. With a combination of the RTP and deuterium (D) anneal, the strongest coupling among the Si-D, Si-Si, and Si-O bonds was observed. It is shown that not only Si-D bonds but also Si-O bonds have been strengthened dramatically when this effect is applied directly to the oxide, leading to an enhanced robustness of the oxide structure. The gate leakage current has been reduced by five orders of magnitude for thin oxides (2.2 nm) and two orders of magnitude for thick oxides (>3 nm). The breakdown voltage has been improved by ∼30%

Original languageEnglish
Article number082905
JournalApplied Physics Letters
Issue number8
StatePublished - 2006

Bibliographical note

Funding Information:
This research is supported by National Science Foundation (Nos. ECS-0093156 and EPS-0447479). The authors thank Dr. Chandan Samantaray, Pangleen Ong, and Wei Wen for technical assistance. They also thank Ross M. Boyle of Thermo Electron Corporation and Si-Chen Lee of National Taiwan University for helpful suggestions.

Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Phonon-energy-coupling enhancement: Strengthening the chemical bonds of the SiO 2/Si system'. Together they form a unique fingerprint.

Cite this