Photogeneration and transport in thin films of p- and n-type discotic liquid crystals

P. Miskiewicz; A. Rybak; J. Jung; I. Glowaoki; J. Ulanski; Y. Geerts; M. Watson; K. Mullen

doi:10.1016/S0379-6779(02)01023-8

Photogeneration and transport in thin films of p- and n-type discotic liquid crystals

P. Miskiewicz, A. Rybak, J. Jung, I. Glowaoki, J. Ulanski, Y. Geerts, M. Watson, K. Mullen

Chemistry

Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

Thin layers of discotic liquid crystals, p-type: HBC-C8,2, HBC-C12 and n-type: HATNA 4D, RDlSCl and perylene derivative were prepared by drop- and zone-casting. It is shown, that zone-casting yields aligned, anisotropic films with "edge-on" orientation suitable for FET construction. In the isotropic, obtained by drop-casting films the charge-carrier photogeneration, recombination and transport were investigated by means of xerographic discharge. For the first time it is demonstrated experimentally that in the nominally n-type discotics the majority charge carriers are electrons.

Original language	English
Pages (from-to)	905-906
Number of pages	2
Journal	Synthetic Metals
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(02)01023-8
State	Published - Apr 4 2003
Event	ICSM 2002 - Shanghai, China Duration: Jun 29 2002 → Jul 5 2002

Keywords

Manipulation of surface structure and morphology
Photoconductivity
Semiconducting films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/S0379-6779(02)01023-8

Cite this

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title = "Photogeneration and transport in thin films of p- and n-type discotic liquid crystals",

abstract = "Thin layers of discotic liquid crystals, p-type: HBC-C8,2, HBC-C12 and n-type: HATNA 4D, RDlSCl and perylene derivative were prepared by drop- and zone-casting. It is shown, that zone-casting yields aligned, anisotropic films with {"}edge-on{"} orientation suitable for FET construction. In the isotropic, obtained by drop-casting films the charge-carrier photogeneration, recombination and transport were investigated by means of xerographic discharge. For the first time it is demonstrated experimentally that in the nominally n-type discotics the majority charge carriers are electrons.",

keywords = "Manipulation of surface structure and morphology, Photoconductivity, Semiconducting films",

author = "P. Miskiewicz and A. Rybak and J. Jung and I. Glowaoki and J. Ulanski and Y. Geerts and M. Watson and K. Mullen",

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doi = "10.1016/S0379-6779(02)01023-8",

language = "English",

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TY - JOUR

T1 - Photogeneration and transport in thin films of p- and n-type discotic liquid crystals

AU - Miskiewicz, P.

AU - Rybak, A.

AU - Jung, J.

AU - Glowaoki, I.

AU - Ulanski, J.

AU - Geerts, Y.

AU - Watson, M.

AU - Mullen, K.

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Thin layers of discotic liquid crystals, p-type: HBC-C8,2, HBC-C12 and n-type: HATNA 4D, RDlSCl and perylene derivative were prepared by drop- and zone-casting. It is shown, that zone-casting yields aligned, anisotropic films with "edge-on" orientation suitable for FET construction. In the isotropic, obtained by drop-casting films the charge-carrier photogeneration, recombination and transport were investigated by means of xerographic discharge. For the first time it is demonstrated experimentally that in the nominally n-type discotics the majority charge carriers are electrons.

AB - Thin layers of discotic liquid crystals, p-type: HBC-C8,2, HBC-C12 and n-type: HATNA 4D, RDlSCl and perylene derivative were prepared by drop- and zone-casting. It is shown, that zone-casting yields aligned, anisotropic films with "edge-on" orientation suitable for FET construction. In the isotropic, obtained by drop-casting films the charge-carrier photogeneration, recombination and transport were investigated by means of xerographic discharge. For the first time it is demonstrated experimentally that in the nominally n-type discotics the majority charge carriers are electrons.

KW - Manipulation of surface structure and morphology

KW - Photoconductivity

KW - Semiconducting films

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U2 - 10.1016/S0379-6779(02)01023-8

DO - 10.1016/S0379-6779(02)01023-8

M3 - Conference article

AN - SCOPUS:0037419076

SN - 0379-6779

VL - 137

SP - 905

EP - 906

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - ICSM 2002

Y2 - 29 June 2002 through 5 July 2002

ER -

Photogeneration and transport in thin films of p- and n-type discotic liquid crystals

Abstract

Keywords

ASJC Scopus subject areas

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