Pipe-diffusion ripening of Si precipitates in Al-0.5%Cu-1%Si thin films

M. Legros, B. Kaouache, P. Gergaud, O. Thomas, G. Dehm, T. J. Balk, E. Arzt

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Al-0.5%Cu-1%Si thin films deposited onto oxidized Si substrates were subjected to both wafer curvature and in situ transmission electron microscopy thermal cycling experiments between room temperature and 450°C. The evolution of precipitates was monitored during cycling. Chemical analysis revealed that the precipitates are pure Si. Their average size increased from 80nm in the as-deposited state to 300nm after thermal cycling. The Si precipitates serve as anchoring points for dislocations and grain boundaries. Direct evidence for pipe-diffusion ripening was found in the vicinity of a dissolving precipitate. Real-time measurement of the radius of the precipitate allowed us to estimate the coefficient of pipe diffusion of Si in Al at this temperature. As expected, this coefficient is several orders of magnitude larger than the volume diffusion coefficient. The impact of precipitate ripening on the mechanical behavior of these alloyed Al films will also be discussed.

Original languageEnglish
Pages (from-to)3541-3552
Number of pages12
JournalPhilosophical Magazine
Issue number30
StatePublished - Oct 21 2005

ASJC Scopus subject areas

  • Condensed Matter Physics


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