TY - JOUR
T1 - Polarization induced high Al composition AlGaN p-n junction grown on silicon substrates
AU - Zhang, Peng
AU - Li, Shi Bin
AU - Yu, Hong Ping
AU - Wu, Zhi Ming
AU - Chen, Zhi
AU - Jiang, Ya Dong
N1 - Publisher Copyright:
© 2014 Chinese Physical Society and IOP Publishing Ltd.
PY - 2014/11/1
Y1 - 2014/11/1
N2 - Wide bandgap AlxGa1-xN (x = 0.7-1) p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from AlN to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from Al0.7Ga0.3N to AlN. The polarization charge field induced hole density is on the order of 1018 cm-3 in the graded AlxGa1-xN:Be (x = 0.7-1) p-n junction. Polarization doping provides a feasible way to mass produce III-nitride devices on silicon substrates.
AB - Wide bandgap AlxGa1-xN (x = 0.7-1) p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from AlN to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from Al0.7Ga0.3N to AlN. The polarization charge field induced hole density is on the order of 1018 cm-3 in the graded AlxGa1-xN:Be (x = 0.7-1) p-n junction. Polarization doping provides a feasible way to mass produce III-nitride devices on silicon substrates.
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U2 - 10.1088/0256-307X/31/11/118102
DO - 10.1088/0256-307X/31/11/118102
M3 - Article
AN - SCOPUS:84924365577
SN - 0256-307X
VL - 31
JO - Chinese Physics Letters
JF - Chinese Physics Letters
IS - 11
M1 - 118102
ER -