Polarization induced hole doping on the order of ∼1018 cm-3 is achieved in linearly graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded AlxGa1-xN and conventional Al0.7Ga0.3N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded AlxGa 1-xN:Be (x = 0.7 ∼ 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al0.7Ga 0.3N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.
|Journal||Applied Physics Letters|
|State||Published - Feb 11 2013|
Bibliographical noteFunding Information:
This work was partially supported by the National Science Foundation of China via Grant No. 61204098.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)