Polarization induced hole doping in graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

Shibin Li; Ting Zhang; Jiang Wu; Yajie Yang; Zhiming Wang; Zhiming Wu; Zhi Chen; Yadong Jiang

doi:10.1063/1.4792685

Polarization induced hole doping in graded Al_xGa _1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

Shibin Li, Ting Zhang, Jiang Wu, Yajie Yang, Zhiming Wang, Zhiming Wu, Zhi Chen, Yadong Jiang

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

Polarization induced hole doping on the order of ∼10¹⁸ cm^-3 is achieved in linearly graded Al_xGa _1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded Al_xGa_1-xN and conventional Al_0.7Ga_0.3N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded Al_xGa _1-xN:Be (x = 0.7 ∼ 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al_0.7Ga _0.3N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.

Original language	English
Article number	062108
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792685
State	Published - Feb 11 2013

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation of China via Grant No. 61204098.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4792685

Cite this

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title = "Polarization induced hole doping in graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy",

abstract = "Polarization induced hole doping on the order of ∼1018 cm-3 is achieved in linearly graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded AlxGa1-xN and conventional Al0.7Ga0.3N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded AlxGa 1-xN:Be (x = 0.7 ∼ 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al0.7Ga 0.3N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.",

author = "Shibin Li and Ting Zhang and Jiang Wu and Yajie Yang and Zhiming Wang and Zhiming Wu and Zhi Chen and Yadong Jiang",

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T1 - Polarization induced hole doping in graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

AU - Li, Shibin

AU - Zhang, Ting

AU - Wu, Jiang

AU - Yang, Yajie

AU - Wang, Zhiming

AU - Wu, Zhiming

AU - Chen, Zhi

AU - Jiang, Yadong

N1 - Funding Information: This work was partially supported by the National Science Foundation of China via Grant No. 61204098.

PY - 2013/2/11

Y1 - 2013/2/11

N2 - Polarization induced hole doping on the order of ∼1018 cm-3 is achieved in linearly graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded AlxGa1-xN and conventional Al0.7Ga0.3N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded AlxGa 1-xN:Be (x = 0.7 ∼ 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al0.7Ga 0.3N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.

AB - Polarization induced hole doping on the order of ∼1018 cm-3 is achieved in linearly graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded AlxGa1-xN and conventional Al0.7Ga0.3N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded AlxGa 1-xN:Be (x = 0.7 ∼ 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al0.7Ga 0.3N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.

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