We present a pulsed laser deposition system that can monitor growth by simultaneously using in situ optical spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). The RHEED precisely monitors the number of thin-film layers and surface structure during the deposition, and the SE measures the optical spectra of the samples simultaneously. The thin-film thickness information obtained from RHEED facilitates the SE modeling process, which allows extracting the in situ optical spectra, i.e., the dielectric functions of thin-films during growth. The in situ dielectric functions contain indispensable information about the electronic structure of thin-films. We demonstrate the performance of this system by growing LaMnO3δ (LMO) thin-films on SrTiO3 (001) substrates. By using in situ SE and RHEED simultaneously, we show that real-time thickness and dielectric functions of the LMO thin-films can be effectively extracted. The simultaneous monitoring of both optical SE and RHEED offers important clues to understand the growth mechanism of atomic-scale thin-films.
|Journal||Review of Scientific Instruments|
|State||Published - Apr 2013|
Bibliographical noteFunding Information:
This research was supported by the National Science Foundation (NSF) through Grant No. EPS-0814194 (the Center for Advanced Materials) and the Kentucky Science and Engineering Foundation with the Kentucky Science and Technology Corporation through Grant Agreement No. KSEF-148-502-12-303.
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