Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Peter J. Diemer; Zachary A. Lamport; Yaochuan Mei; Jeremy W. Ward; Katelyn P. Goetz; Wei Li; Marcia M. Payne; Martin Guthold; John E. Anthony; Oana D. Jurchescu

doi:10.1063/1.4930310

Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Peter J. Diemer, Zachary A. Lamport, Yaochuan Mei, Jeremy W. Ward, Katelyn P. Goetz, Wei Li, Marcia M. Payne, Martin Guthold, John E. Anthony, Oana D. Jurchescu

Research output: Contribution to journal › Article › peer-review

66 Citations (SciVal)

Abstract

The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO₂ dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm² V^-1 s^-1 to 1.5 ± 0.70 cm² V^-1 s^-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

Original language	English
Article number	103303
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930310
State	Published - Sep 7 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4930310

Cite this

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abstract = "The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.",

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AU - Diemer, Peter J.

AU - Lamport, Zachary A.

AU - Mei, Yaochuan

AU - Ward, Jeremy W.

AU - Goetz, Katelyn P.

AU - Li, Wei

AU - Payne, Marcia M.

AU - Guthold, Martin

AU - Anthony, John E.

AU - Jurchescu, Oana D.

PY - 2015/9/7

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N2 - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

AB - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

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Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Abstract

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