Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Peter J. Diemer, Zachary A. Lamport, Yaochuan Mei, Jeremy W. Ward, Katelyn P. Goetz, Wei Li, Marcia M. Payne, Martin Guthold, John E. Anthony, Oana D. Jurchescu

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76 Scopus citations

Abstract

The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

Original languageEnglish
Article number103303
JournalApplied Physics Letters
Volume107
Issue number10
DOIs
StatePublished - Sep 7 2015

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© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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