TY - JOUR
T1 - Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors
AU - Diemer, Peter J.
AU - Lamport, Zachary A.
AU - Mei, Yaochuan
AU - Ward, Jeremy W.
AU - Goetz, Katelyn P.
AU - Li, Wei
AU - Payne, Marcia M.
AU - Guthold, Martin
AU - Anthony, John E.
AU - Jurchescu, Oana D.
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/9/7
Y1 - 2015/9/7
N2 - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.
AB - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.
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U2 - 10.1063/1.4930310
DO - 10.1063/1.4930310
M3 - Article
AN - SCOPUS:84941282484
SN - 0003-6951
VL - 107
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 10
M1 - 103303
ER -