Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Peter J. Diemer; Zachary A. Lamport; Yaochuan Mei; Jeremy W. Ward; Katelyn P. Goetz; Wei Li; Marcia M. Payne; Martin Guthold; John E. Anthony; Oana D. Jurchescu

doi:10.1063/1.4930310

Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Peter J. Diemer
, Zachary A. Lamport
, Yaochuan Mei
, Jeremy W. Ward
, Katelyn P. Goetz
, Wei Li
, Marcia M. Payne
, Martin Guthold
, John E. Anthony
, Oana D. Jurchescu

Research output: Contribution to journal › Article › peer-review

93 Scopus citations

Abstract

The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO₂ dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm² V^-1 s^-1 to 1.5 ± 0.70 cm² V^-1 s^-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

Original language	English
Article number	103303
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930310
State	Published - Sep 7 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

Funding

Funders	Funder number
National Science Foundation (NSF)	ECCS-1338012, CMMI-1255494, ECCS-1254757
National Science Foundation (NSF)	1255494

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4930310

Cite this

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title = "Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors",

abstract = "The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.",

author = "Diemer, \{Peter J.\} and Lamport, \{Zachary A.\} and Yaochuan Mei and Ward, \{Jeremy W.\} and Goetz, \{Katelyn P.\} and Wei Li and Payne, \{Marcia M.\} and Martin Guthold and Anthony, \{John E.\} and Jurchescu, \{Oana D.\}",

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doi = "10.1063/1.4930310",

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AU - Diemer, Peter J.

AU - Lamport, Zachary A.

AU - Mei, Yaochuan

AU - Ward, Jeremy W.

AU - Goetz, Katelyn P.

AU - Li, Wei

AU - Payne, Marcia M.

AU - Guthold, Martin

AU - Anthony, John E.

AU - Jurchescu, Oana D.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

AB - The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V-1 s-1 to 1.5 ± 0.70 cm2 V-1 s-1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the contact resistance.

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IS - 10

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Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Abstract

Bibliographical note

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