Raman spectroscopy characterization of aqueous vanadate species interaction with aluminum alloy 2024-T3 surfaces

B. L. Hurley, S. Qiu, R. G. Buchheit

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Raman spectroscopy and electrochemical techniques were used to characterize the interactions of aqueous NaVO3/NaCl and NH4VO 3/oxalic acid with AA 2024-T3. The interaction of aqueous NaVO 3 with Cu0 and Cu2O was characterized. At potential values similar to the OCP of AA 2024-T3 in dilute NaCl, aqueous NaVO3 formed a polyvanadate film on Cu2O and formed little or no vanadate film on Cu0. Treatment of AA 2024-T3 with basic, aqueous NaVO3/NaCl resulted in a polyvanadate film on copper-rich intermetallic particles and the formation of monovanadates on the matrix. Treatment of AA 2024-T3 with acidic, aqueous NH4VO3/oxalic resulted in the formation of monovanadates on the matrix and provided no evidence of vanadate species on copper-rich particles. AA 2024-T3 samples pretreated with either aqueous vanadate salt solution displayed modest cathodic inhibition soon after treatment but inhibition degraded with aging. The formation of polymerized vanadates species on copper-rich particles supports the cathodic inhibition mechanism. The presence of vanadate species on copper-rich particles pretreated with aqueous NaVO3/NaCl containing predominantly tetrahedral vanadates versus the lack of evidence for similar species on particles treated with aqueous NH4VO3/oxalic acid containing predominantly octahedral vanadates supports the importance of tetrahedrally coordinated vanadate species for corrosion inhibition.

Original languageEnglish
Pages (from-to)C125-C131
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
StatePublished - 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment

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