Spatial-phase locked electron beam lithography (SPLEBL) provides feedback control of electron beam position by monitoring the signal from a fiducial grid on the substrate. Continuous, or "real-time," spatial-phase locking has been investigated for raster-scan Gaussian beam and for shaped-beam systems. Discontinuous feedback, or "look-then-write," techniques have been implemented for vector-scan systems. However, it would be advantageous to provide real-time spatial-phase locking for vector-scan systems because of their wide adoption for research, prototyping, and specialty device production. Here, the authors present a phase locking algorithm, performance simulations, and initial experimental results for real-time, vector-scan SPLEBL. The authors demonstrate that real-time, vector-scan SPLEBL can provide subnanometer precision phase locking for different feature filling strategies, exposure parameters, and pattern geometries using reasonable data lengths and practical grid signal-to-noise ratios.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 2007|
Bibliographical noteFunding Information:
This material is based upon work supported by the National Science Foundation under Grant No. 0601351. Facilities and technical assistance for this work were provided by the University of Kentucky Center for Nanoscale Science and Engineering (CeNSE) which is supported by National Science Foundation EPSCoR Award No. 0447479. The authors would like to acknowledge Lance DeLong and Wentao Xu (University of Kentucky Department of Physics) for their help with the electron beam lithography system. Timothy Savas and Thomas O’Reilly from MIT’s Nanostructures Laboratory provided the fiducial grids used in this work.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering