The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.
|Journal||Applied Physics Letters|
|State||Published - 2006|
Bibliographical noteFunding Information:
This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)