Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Chandan B. Samantaray, Zhi Chen

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.

Original languageEnglish
Article number162903
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
StatePublished - 2006

Bibliographical note

Funding Information:
This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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