Abstract
The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.
Original language | English |
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Article number | 162903 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 16 |
DOIs | |
State | Published - 2006 |
Bibliographical note
Funding Information:This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)