Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Chandan B. Samantaray; Zhi Chen

doi:10.1063/1.2363139

Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Chandan B. Samantaray, Zhi Chen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.

Original language	English
Article number	162903
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2363139
State	Published - 2006

Bibliographical note

Funding Information:
This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2363139

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title = "Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling",

abstract = "The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 {\AA} was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 {\AA}.",

author = "Samantaray, {Chandan B.} and Zhi Chen",

note = "Funding Information: This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.",

year = "2006",

doi = "10.1063/1.2363139",

language = "English",

volume = "89",

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T1 - Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

AU - Samantaray, Chandan B.

AU - Chen, Zhi

N1 - Funding Information: This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.

PY - 2006

Y1 - 2006

N2 - The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.

AB - The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.

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U2 - 10.1063/1.2363139

DO - 10.1063/1.2363139

M3 - Article

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162903

ER -

Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling

Abstract

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