Abstract
The authors have investigated the effect of phonon-energy-coupling enhancement induced by rapid thermal processing (RTP) and deuterium annealing on the leakage current characteristics of HfSiON gate dielectrics. The leakage current is reduced by one- and-a-half orders of magnitude after RTP and deuterium annealing of HfSiON gate dielectrics. The leakage current density of the HfSiON gate insulator with equivalent oxide thickness of 5.2 Å was only 4× 10-2 A cm-2. This suggests that HfSiON with the enhanced phonon-energy coupling can be scaled down to below 5 Å.
| Original language | English |
|---|---|
| Article number | 162903 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2006 |
Bibliographical note
Funding Information:This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.
Funding
This research is supported by the National Science Foundation (ECS-0093156 and EPS-0447479) and the Office of Vice President for Research, University of Kentucky.
| Funders | Funder number |
|---|---|
| Office of the Vice President for Research at the University of Kentucky | |
| U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China | ECS-0093156, EPS-0447479 |
| U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)