Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

Pang Leen Ong; Chandan Samantaray; Zhi Chen

Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

Pang Leen Ong, Chandan Samantaray, Zhi Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	64th DRC 2006 - Device Research Conference
Pages	79-80
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: Jun 26 2006 → Jun 28 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	6/26/06 → 6/28/06

Funding

This research is supported by National Science Foundation (ECS-0093156 and EPS- 0447479) and the Office of Vice President for Research, University of Kentucky.

Funders	Funder number
Office of the Vice President for Research at the University of Kentucky
National Science Foundation Arctic Social Science Program	ECS-0093156, EPS- 0447479

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{843309b9ed724647a436c11d02b62e36,

title = "Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement",

author = "Ong, \{Pang Leen\} and Chandan Samantaray and Zhi Chen",

year = "2006",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

pages = "79--80",

booktitle = "64th DRC 2006 - Device Research Conference",

note = "64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

}

Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement. / Ong, Pang Leen; Samantaray, Chandan; Chen, Zhi.
64th DRC 2006 - Device Research Conference. 2006. p. 79-80 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

AU - Ong, Pang Leen

AU - Samantaray, Chandan

AU - Chen, Zhi

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=85205722818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85205722818&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85205722818

T3 - Device Research Conference - Conference Digest, DRC

SP - 79

EP - 80

BT - 64th DRC 2006 - Device Research Conference

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

Publication series

Conference

Funding

ASJC Scopus subject areas

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Cite this