Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Zhi Chen, Pradeep Garg, Aarong Pangling Ong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Pages197-199
Number of pages3
ISBN (Electronic)0780377494, 9780780377493
DOIs
StatePublished - 2003
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: Dec 16 2003Dec 18 2003

Publication series

Name2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/TerritoryHong Kong
CityTsimshatsui, Kowloon
Period12/16/0312/18/03

Bibliographical note

Publisher Copyright:
©2003 IEEE.

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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