Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Zhi Chen; Pradeep Garg; Aarong Pangling Ong

doi:10.1109/EDSSC.2003.1283513

Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Zhi Chen, Pradeep Garg, Aarong Pangling Ong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

Original language	English
Title of host publication	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Pages	197-199
Number of pages	3
ISBN (Electronic)	0780377494, 9780780377493
DOIs	https://doi.org/10.1109/EDSSC.2003.1283513
State	Published - 2003
Event	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong Duration: Dec 16 2003 → Dec 18 2003

Publication series

Name	2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/Territory	Hong Kong
City	Tsimshatsui, Kowloon
Period	12/16/03 → 12/18/03

Bibliographical note

Publisher Copyright:
©2003 IEEE.

Funding

Funders	Funder number
National Science Foundation (NSF)	DMR-9809686, ECS-0093156

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2003.1283513

Cite this

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title = "Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing",

abstract = "In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.",

author = "Zhi Chen and Pradeep Garg and Ong, {Aarong Pangling}",

note = "Publisher Copyright: {\textcopyright}2003 IEEE.; IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 ; Conference date: 16-12-2003 Through 18-12-2003",

year = "2003",

doi = "10.1109/EDSSC.2003.1283513",

language = "English",

series = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

pages = "197--199",

booktitle = "2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003",

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Chen, Z, Garg, P & Ong, AP 2003, Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing. in 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003., 1283513, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, pp. 197-199, IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003, Tsimshatsui, Kowloon, Hong Kong, 12/16/03. https://doi.org/10.1109/EDSSC.2003.1283513

Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing. / Chen, Zhi; Garg, Pradeep; Ong, Aarong Pangling.
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003. 2003. p. 197-199 1283513 (2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Garg, Pradeep

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N2 - In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

AB - In this paper, we report, for the first time, the significant reduction of hot-carrier-induced 1/f (flicker) noise of MOS transistors using deuterium anneal over traditional hydrogen anneal. Previous experiments by Aoki et al [1] showed that hole-related oxide traps contribute mainly to 1/f noise. Based on our studies of isotope effect of the flicker noise, we show that the Si-dangling-bond type of interface traps also contribute significantly to the 1/f noise of MOS devices.

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BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Y2 - 16 December 2003 through 18 December 2003

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Reduction of hot-carrier-induced 1/f noise of MOS devices using deuterium processing

Abstract

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Conference

Bibliographical note

Funding

ASJC Scopus subject areas

Access to Document

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