Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

M. Wagenpfeil; T. Ziegler; J. Schneider; A. Fieguth; M. Murra; D. Schulte; L. Althueser; C. Huhmann; C. Weinheimer; T. Michel; G. Anton; G. Adhikari; S. Al kharusi; E. Angelico; I. J. Arnquist; I. Badhrees; J. Bane; D. Beck; V. Belov; T. Bhatta; A. Bolotnikov; P. A. Breur; J. P. Brodsky; E. Brown; T. Brunner; E. Caden; G. F. Cao; C. Chambers; B. Chana; S. A. Charlebois; D. Chernyak; M. Chiu; B. Cleveland; A. Craycraft; T. Daniels; L. Darroch; A. Der mesrobian-Kabakian; A. De; K. Deslandes; R. Devoe; M. L. Di vacri; M. J. Dolinski; J. Echevers; M. Elbeltagi; L. Fabris; D. Fairbank; W. Fairbank; J. Farine; S. Ferrara; S. Feyzbakhsh; G. Gallina; P. Gautam; G. Giacomini; C. Gingras; D. Goeldi; A. Gorham; R. Gornea; G. Gratta; E. V. Hansen; C. A. Hardy; K. Harouaka; M. Heffner; E. W. Hoppe; A. House; M. Hughes; A. Iverson; A. Jamil; M. Jewell; A. Karelin; L. J. Kaufman; R. Krücken; A. Kuchenkov; K. S. Kumar; Y. Lan; A. Larson; K. G. Leach; D. S. Leonard; G. Li; S. Li; Z. Li; C. Licciardi; R. Lindsay; R. Maclellan; P. Martel-Dion; N. Massacret; T. Mcelroy; M. Medina peregrina; B. Mong; D. C. Moore; K. Murray; J. Nattress; C. R. Natzke; R. J. Newby; F. Nolet; O. Nusair; J. C. Nzobadila ondze; K. Odgers; A. Odian; J. L. Orrell; G. S. Ortega; I. Ostrovskiy; C. T. Overman; S. Parent; A. Piepke; A. Pocar; J. F. Pratte; E. Raguzin; G. J. Ramonnye; H. Rasiwala; S. Rescia; F. Reti re; C. Richard; M. Richman; J. Ringuette; A. Robinson; T. Rossignol; P. C. Rowson; N. Roy; R. Saldanha; S. Sangiorgio; A. K. Soma; F. Spadoni; V. Stekhanov; T. Stiegler; M. Tarka; S. Thibado; A. Tidball; J. Todd; T. Totev; S. Triambak; R. Tsang; F. Vachon; V. Veeraraghavan; S. Viel; C. Vivo-Vilches; M. Walent; U. Wichoski; M. Worcester; S. X. Wu; Q. Xia; W. Yan; L. Yang; O. Zeldovich

doi:10.1088/1748-0221/16/08/P08002

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

M. Wagenpfeil, T. Ziegler, J. Schneider, A. Fieguth, M. Murra, D. Schulte, L. Althueser, C. Huhmann, C. Weinheimer, T. Michel, G. Anton, G. Adhikari, S. Al kharusi, E. Angelico, I. J. Arnquist, I. Badhrees, J. Bane, D. Beck, V. Belov, T. BhattaA. Bolotnikov, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, E. Caden, G. F. Cao, C. Chambers, B. Chana, S. A. Charlebois, D. Chernyak, M. Chiu, B. Cleveland, A. Craycraft, T. Daniels, L. Darroch, A. Der mesrobian-Kabakian, A. De, K. Deslandes, R. Devoe, M. L. Di vacri, M. J. Dolinski, J. Echevers, M. Elbeltagi, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Ferrara, S. Feyzbakhsh, G. Gallina, P. Gautam, G. Giacomini, C. Gingras, D. Goeldi, A. Gorham, R. Gornea, G. Gratta, E. V. Hansen, C. A. Hardy, K. Harouaka, M. Heffner, E. W. Hoppe, A. House, M. Hughes, A. Iverson, A. Jamil, M. Jewell, A. Karelin, L. J. Kaufman, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, K. G. Leach, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, R. Lindsay, R. Maclellan, P. Martel-Dion, N. Massacret, T. Mcelroy, M. Medina peregrina, B. Mong, D. C. Moore, K. Murray, J. Nattress, C. R. Natzke, R. J. Newby, F. Nolet, O. Nusair, J. C. Nzobadila ondze, K. Odgers, A. Odian, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. F. Pratte, E. Raguzin, G. J. Ramonnye, H. Rasiwala, S. Rescia, F. Reti re, C. Richard, M. Richman, J. Ringuette, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, A. K. Soma, F. Spadoni, V. Stekhanov, T. Stiegler, M. Tarka, S. Thibado, A. Tidball, J. Todd, T. Totev, S. Triambak, R. Tsang, F. Vachon, V. Veeraraghavan, S. Viel, C. Vivo-Vilches, M. Walent, U. Wichoski, M. Worcester, S. X. Wu, Q. Xia, W. Yan, L. Yang, O. Zeldovich

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

Original language	English
Article number	P08002
Journal	Journal of Instrumentation
Volume	16
Issue number	8
DOIs	https://doi.org/10.1088/1748-0221/16/08/P08002
State	Published - Aug 2021

Bibliographical note

Publisher Copyright:
© 2021 IOP Publishing Ltd and Sissa Medialab.

Keywords

APDs
CCDs
CMOS imagers
EBCCDs
EMCCDs
G-APDs
Photon detectors for UV
Photon detectors for UV
Si-PMTs
etc)
visible and IR photons (solid-state)
visible and IR photons (solid-state)(PIN diodes

ASJC Scopus subject areas

Instrumentation
Mathematical Physics

Access to Document

10.1088/1748-0221/16/08/P08002

Cite this

Wagenpfeil, M., Ziegler, T., Schneider, J., Fieguth, A., Murra, M., Schulte, D., Althueser, L., Huhmann, C., Weinheimer, C., Michel, T., Anton, G., Adhikari, G., Al kharusi, S., Angelico, E., Arnquist, I. J., Badhrees, I., Bane, J., Beck, D., Belov, V., ... Zeldovich, O. (2021). Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon. Journal of Instrumentation, 16(8), Article P08002. https://doi.org/10.1088/1748-0221/16/08/P08002

@article{d476ee0c1737423197dd8d348ac485fb,

title = "Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon",

abstract = "Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of M{\"u}nster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.",

keywords = "APDs, CCDs, CMOS imagers, EBCCDs, EMCCDs, G-APDs, Photon detectors for UV, Photon detectors for UV, Si-PMTs, etc), visible and IR photons (solid-state), visible and IR photons (solid-state)(PIN diodes",

author = "M. Wagenpfeil and T. Ziegler and J. Schneider and A. Fieguth and M. Murra and D. Schulte and L. Althueser and C. Huhmann and C. Weinheimer and T. Michel and G. Anton and G. Adhikari and {Al kharusi}, S. and E. Angelico and Arnquist, {I. J.} and I. Badhrees and J. Bane and D. Beck and V. Belov and T. Bhatta and A. Bolotnikov and Breur, {P. A.} and Brodsky, {J. P.} and E. Brown and T. Brunner and E. Caden and Cao, {G. F.} and C. Chambers and B. Chana and Charlebois, {S. A.} and D. Chernyak and M. Chiu and B. Cleveland and A. Craycraft and T. Daniels and L. Darroch and {Der mesrobian-Kabakian}, A. and A. De and K. Deslandes and R. Devoe and {Di vacri}, {M. L.} and Dolinski, {M. J.} and J. Echevers and M. Elbeltagi and L. Fabris and D. Fairbank and W. Fairbank and J. Farine and S. Ferrara and S. Feyzbakhsh and G. Gallina and P. Gautam and G. Giacomini and C. Gingras and D. Goeldi and A. Gorham and R. Gornea and G. Gratta and Hansen, {E. V.} and Hardy, {C. A.} and K. Harouaka and M. Heffner and Hoppe, {E. W.} and A. House and M. Hughes and A. Iverson and A. Jamil and M. Jewell and A. Karelin and Kaufman, {L. J.} and R. Kr{\"u}cken and A. Kuchenkov and Kumar, {K. S.} and Y. Lan and A. Larson and Leach, {K. G.} and Leonard, {D. S.} and G. Li and S. Li and Z. Li and C. Licciardi and R. Lindsay and R. Maclellan and P. Martel-Dion and N. Massacret and T. Mcelroy and {Medina peregrina}, M. and B. Mong and Moore, {D. C.} and K. Murray and J. Nattress and Natzke, {C. R.} and Newby, {R. J.} and F. Nolet and O. Nusair and {Nzobadila ondze}, {J. C.} and K. Odgers and A. Odian and Orrell, {J. L.} and Ortega, {G. S.} and I. Ostrovskiy and Overman, {C. T.} and S. Parent and A. Piepke and A. Pocar and Pratte, {J. F.} and E. Raguzin and Ramonnye, {G. J.} and H. Rasiwala and S. Rescia and {Reti re}, F. and C. Richard and M. Richman and J. Ringuette and A. Robinson and T. Rossignol and Rowson, {P. C.} and N. Roy and R. Saldanha and S. Sangiorgio and Soma, {A. K.} and F. Spadoni and V. Stekhanov and T. Stiegler and M. Tarka and S. Thibado and A. Tidball and J. Todd and T. Totev and S. Triambak and R. Tsang and F. Vachon and V. Veeraraghavan and S. Viel and C. Vivo-Vilches and M. Walent and U. Wichoski and M. Worcester and Wu, {S. X.} and Q. Xia and W. Yan and L. Yang and O. Zeldovich",

note = "Publisher Copyright: {\textcopyright} 2021 IOP Publishing Ltd and Sissa Medialab.",

year = "2021",

month = aug,

doi = "10.1088/1748-0221/16/08/P08002",

language = "English",

volume = "16",

number = "8",

}

Wagenpfeil, M, Ziegler, T, Schneider, J, Fieguth, A, Murra, M, Schulte, D, Althueser, L, Huhmann, C, Weinheimer, C, Michel, T, Anton, G, Adhikari, G, Al kharusi, S, Angelico, E, Arnquist, IJ, Badhrees, I, Bane, J, Beck, D, Belov, V, Bhatta, T, Bolotnikov, A, Breur, PA, Brodsky, JP, Brown, E, Brunner, T, Caden, E, Cao, GF, Chambers, C, Chana, B, Charlebois, SA, Chernyak, D, Chiu, M, Cleveland, B, Craycraft, A, Daniels, T, Darroch, L, Der mesrobian-Kabakian, A, De, A, Deslandes, K, Devoe, R, Di vacri, ML, Dolinski, MJ, Echevers, J, Elbeltagi, M, Fabris, L, Fairbank, D, Fairbank, W, Farine, J, Ferrara, S, Feyzbakhsh, S, Gallina, G, Gautam, P, Giacomini, G, Gingras, C, Goeldi, D, Gorham, A, Gornea, R, Gratta, G, Hansen, EV, Hardy, CA, Harouaka, K, Heffner, M, Hoppe, EW, House, A, Hughes, M, Iverson, A, Jamil, A, Jewell, M, Karelin, A, Kaufman, LJ, Krücken, R, Kuchenkov, A, Kumar, KS, Lan, Y, Larson, A, Leach, KG, Leonard, DS, Li, G, Li, S, Li, Z, Licciardi, C, Lindsay, R, Maclellan, R, Martel-Dion, P, Massacret, N, Mcelroy, T, Medina peregrina, M, Mong, B, Moore, DC, Murray, K, Nattress, J, Natzke, CR, Newby, RJ, Nolet, F, Nusair, O, Nzobadila ondze, JC, Odgers, K, Odian, A, Orrell, JL, Ortega, GS, Ostrovskiy, I, Overman, CT, Parent, S, Piepke, A, Pocar, A, Pratte, JF, Raguzin, E, Ramonnye, GJ, Rasiwala, H, Rescia, S, Reti re, F, Richard, C, Richman, M, Ringuette, J, Robinson, A, Rossignol, T, Rowson, PC, Roy, N, Saldanha, R, Sangiorgio, S, Soma, AK, Spadoni, F, Stekhanov, V, Stiegler, T, Tarka, M, Thibado, S, Tidball, A, Todd, J, Totev, T, Triambak, S, Tsang, R, Vachon, F, Veeraraghavan, V, Viel, S, Vivo-Vilches, C, Walent, M, Wichoski, U, Worcester, M, Wu, SX, Xia, Q, Yan, W, Yang, L & Zeldovich, O 2021, 'Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon', Journal of Instrumentation, vol. 16, no. 8, P08002. https://doi.org/10.1088/1748-0221/16/08/P08002

TY - JOUR

T1 - Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

AU - Wagenpfeil, M.

AU - Ziegler, T.

AU - Schneider, J.

AU - Fieguth, A.

AU - Murra, M.

AU - Schulte, D.

AU - Althueser, L.

AU - Huhmann, C.

AU - Weinheimer, C.

AU - Michel, T.

AU - Anton, G.

AU - Adhikari, G.

AU - Al kharusi, S.

AU - Angelico, E.

AU - Arnquist, I. J.

AU - Badhrees, I.

AU - Bane, J.

AU - Beck, D.

AU - Belov, V.

AU - Bhatta, T.

AU - Bolotnikov, A.

AU - Breur, P. A.

AU - Brodsky, J. P.

AU - Brown, E.

AU - Brunner, T.

AU - Caden, E.

AU - Cao, G. F.

AU - Chambers, C.

AU - Chana, B.

AU - Charlebois, S. A.

AU - Chernyak, D.

AU - Chiu, M.

AU - Cleveland, B.

AU - Craycraft, A.

AU - Daniels, T.

AU - Darroch, L.

AU - Der mesrobian-Kabakian, A.

AU - De, A.

AU - Deslandes, K.

AU - Devoe, R.

AU - Di vacri, M. L.

AU - Dolinski, M. J.

AU - Echevers, J.

AU - Elbeltagi, M.

AU - Fabris, L.

AU - Fairbank, D.

AU - Fairbank, W.

AU - Farine, J.

AU - Ferrara, S.

AU - Feyzbakhsh, S.

AU - Gallina, G.

AU - Gautam, P.

AU - Giacomini, G.

AU - Gingras, C.

AU - Goeldi, D.

AU - Gorham, A.

AU - Gornea, R.

AU - Gratta, G.

AU - Hansen, E. V.

AU - Hardy, C. A.

AU - Harouaka, K.

AU - Heffner, M.

AU - Hoppe, E. W.

AU - House, A.

AU - Hughes, M.

AU - Iverson, A.

AU - Jamil, A.

AU - Jewell, M.

AU - Karelin, A.

AU - Kaufman, L. J.

AU - Krücken, R.

AU - Kuchenkov, A.

AU - Kumar, K. S.

AU - Lan, Y.

AU - Larson, A.

AU - Leach, K. G.

AU - Leonard, D. S.

AU - Li, G.

AU - Li, S.

AU - Li, Z.

AU - Licciardi, C.

AU - Lindsay, R.

AU - Maclellan, R.

AU - Martel-Dion, P.

AU - Massacret, N.

AU - Mcelroy, T.

AU - Medina peregrina, M.

AU - Mong, B.

AU - Moore, D. C.

AU - Murray, K.

AU - Nattress, J.

AU - Natzke, C. R.

AU - Newby, R. J.

AU - Nolet, F.

AU - Nusair, O.

AU - Nzobadila ondze, J. C.

AU - Odgers, K.

AU - Odian, A.

AU - Orrell, J. L.

AU - Ortega, G. S.

AU - Ostrovskiy, I.

AU - Overman, C. T.

AU - Parent, S.

AU - Piepke, A.

AU - Pocar, A.

AU - Pratte, J. F.

AU - Raguzin, E.

AU - Ramonnye, G. J.

AU - Rasiwala, H.

AU - Rescia, S.

AU - Reti re, F.

AU - Richard, C.

AU - Richman, M.

AU - Ringuette, J.

AU - Robinson, A.

AU - Rossignol, T.

AU - Rowson, P. C.

AU - Roy, N.

AU - Saldanha, R.

AU - Sangiorgio, S.

AU - Soma, A. K.

AU - Spadoni, F.

AU - Stekhanov, V.

AU - Stiegler, T.

AU - Tarka, M.

AU - Thibado, S.

AU - Tidball, A.

AU - Todd, J.

AU - Totev, T.

AU - Triambak, S.

AU - Tsang, R.

AU - Vachon, F.

AU - Veeraraghavan, V.

AU - Viel, S.

AU - Vivo-Vilches, C.

AU - Walent, M.

AU - Wichoski, U.

AU - Worcester, M.

AU - Wu, S. X.

AU - Xia, Q.

AU - Yan, W.

AU - Yang, L.

AU - Zeldovich, O.

PY - 2021/8

Y1 - 2021/8

N2 - Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

AB - Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

KW - APDs

KW - CCDs

KW - CMOS imagers

KW - EBCCDs

KW - EMCCDs

KW - G-APDs

KW - Photon detectors for UV

KW - Si-PMTs

KW - etc)

KW - visible and IR photons (solid-state)

KW - visible and IR photons (solid-state)(PIN diodes

UR - http://www.scopus.com/inward/record.url?scp=85112526630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85112526630&partnerID=8YFLogxK

U2 - 10.1088/1748-0221/16/08/P08002

DO - 10.1088/1748-0221/16/08/P08002

M3 - Article

AN - SCOPUS:85112526630

SN - 1748-0221

VL - 16

JO - Journal of Instrumentation

JF - Journal of Instrumentation

IS - 8

M1 - P08002

ER -

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this