Reliable observation of large leakage-current reduction of thin Si O 2 induced by phonon-energy-coupling enhancement: Problems and solution

Zhi Chen, Pang Leen Ong, Yichun Wang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The problems encountered in the observation of large leakage-current reduction of thin Si O2 due to enhanced phonon-energy coupling were thoroughly analyzed. A lithographic method based on bilayer resists (SU-8 and Shipley S1813) and an organic developer (SU-8 developer) was developed to fabricate Ni-gate metal-oxide-semiconductor (MOS) capacitors. After development, an undercut profile of the bilayer resists was clearly demonstrated. A key step, thorough deionized water rinse after a quick isopropyl alcohol rinse during resist patterning, is critical to obtain well-defined Ni electrodes reproducibly. Experimental current-voltage and capacitance-voltage (C-V) curves of the Ni-gate MOS capacitors, together with the C-V curves simulated using the Berkeley Quantum simulator, demonstrate that a large leakage-current reduction (∼100×) can be reliably and reproducibly achieved on thin Si O 2 (∼23 Å) after proper rapid thermal processing.

Original languageEnglish
Pages (from-to)G44-G48
JournalJournal of the Electrochemical Society
Volume157
Issue number2
DOIs
StatePublished - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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