Room-temperature ferroelectricity in hexagonal TbMnO3 thin films

Dong Jik Kim; Tula R. Paudel; Haidong Lu; John D. Burton; John G. Connell; Evgeny Y. Tsymbal; S. S.Ambrose Seo; Alexei Gruverman

doi:10.1002/adma.201403301

Room-temperature ferroelectricity in hexagonal TbMnO₃ thin films

Dong Jik Kim, Tula R. Paudel, Haidong Lu, John D. Burton, John G. Connell, Evgeny Y. Tsymbal, S. S.Ambrose Seo, Alexei Gruverman

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

(Graph Presented) Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO₃ thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.

Original language	English
Pages (from-to)	7660-7665
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	45
DOIs	https://doi.org/10.1002/adma.201403301
State	Published - Dec 3 2014

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Funding

Funders	Funder number
National Science Foundation (NSF)	DMR-0820521, EPS-0814194

Keywords

Ferroelectricity
Hexagonal rareâ earth manganites
Resistive switching
Strainâ engineering

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201403301

Cite this

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title = "Room-temperature ferroelectricity in hexagonal TbMnO3 thin films",

abstract = "(Graph Presented) Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.",

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doi = "10.1002/adma.201403301",

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T1 - Room-temperature ferroelectricity in hexagonal TbMnO3 thin films

AU - Kim, Dong Jik

AU - Paudel, Tula R.

AU - Lu, Haidong

AU - Burton, John D.

AU - Connell, John G.

AU - Tsymbal, Evgeny Y.

AU - Seo, S. S.Ambrose

AU - Gruverman, Alexei

PY - 2014/12/3

Y1 - 2014/12/3

N2 - (Graph Presented) Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.

AB - (Graph Presented) Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.

KW - Ferroelectricity

KW - Hexagonal rareâ earth manganites

KW - Resistive switching

KW - Strainâ engineering

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