Semiconductor-metal phase transition properties and growth texture of vanadium dioxide films on Si3N4 layer

Xiongbang Wei; Xiaohui Yang; Tao Wu; Shibin Li; Shuanghong Wu; Zhiming Wu; Tao Wang; Yadong Jiang; Zhi Chen

doi:10.1080/10584587.2016.1174920

Semiconductor-metal phase transition properties and growth texture of vanadium dioxide films on Si₃N₄ layer

Xiongbang Wei, Xiaohui Yang, Tao Wu, Shibin Li, Shuanghong Wu, Zhiming Wu, Tao Wang, Yadong Jiang, Zhi Chen

Research output: Contribution to journal › Article › peer-review

Abstract

Detailed investigation is carried out to study the thermal-resistance properties of vanadium dioxide films prepared on Si₃N₄ layer. The results demonstrate the films undergo the semiconductor to metal phase transition. The corresponding temperature of the maximum TCR value in cooling process is always lower than that in heating process for the same sample. Analysis reveals the thicker the film, the lower the corresponding temperature of the maximum TCR value in cooling process. The films’ dominant phase is VO₂. As film thickness increases, (200) orientation is dominant and ratio of the grain length to width are 2: 1–3: 1.

Original language	English
Pages (from-to)	208-214
Number of pages	7
Journal	Integrated Ferroelectrics
Volume	171
Issue number	1
DOIs	https://doi.org/10.1080/10584587.2016.1174920
State	Published - May 3 2016

Bibliographical note

Publisher Copyright:
© 2016, © Taylor & Francis Group, LLC.

Keywords

Vanadium dioxide films
film grains
film thickness
thermal resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584587.2016.1174920

Cite this

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title = "Semiconductor-metal phase transition properties and growth texture of vanadium dioxide films on Si3N4 layer",

abstract = "Detailed investigation is carried out to study the thermal-resistance properties of vanadium dioxide films prepared on Si3N4 layer. The results demonstrate the films undergo the semiconductor to metal phase transition. The corresponding temperature of the maximum TCR value in cooling process is always lower than that in heating process for the same sample. Analysis reveals the thicker the film, the lower the corresponding temperature of the maximum TCR value in cooling process. The films{\textquoteright} dominant phase is VO2. As film thickness increases, (200) orientation is dominant and ratio of the grain length to width are 2: 1–3: 1.",

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AU - Wei, Xiongbang

AU - Yang, Xiaohui

AU - Wu, Tao

AU - Li, Shibin

AU - Wu, Shuanghong

AU - Wu, Zhiming

AU - Wang, Tao

AU - Jiang, Yadong

AU - Chen, Zhi

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N2 - Detailed investigation is carried out to study the thermal-resistance properties of vanadium dioxide films prepared on Si3N4 layer. The results demonstrate the films undergo the semiconductor to metal phase transition. The corresponding temperature of the maximum TCR value in cooling process is always lower than that in heating process for the same sample. Analysis reveals the thicker the film, the lower the corresponding temperature of the maximum TCR value in cooling process. The films’ dominant phase is VO2. As film thickness increases, (200) orientation is dominant and ratio of the grain length to width are 2: 1–3: 1.

AB - Detailed investigation is carried out to study the thermal-resistance properties of vanadium dioxide films prepared on Si3N4 layer. The results demonstrate the films undergo the semiconductor to metal phase transition. The corresponding temperature of the maximum TCR value in cooling process is always lower than that in heating process for the same sample. Analysis reveals the thicker the film, the lower the corresponding temperature of the maximum TCR value in cooling process. The films’ dominant phase is VO2. As film thickness increases, (200) orientation is dominant and ratio of the grain length to width are 2: 1–3: 1.

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