Abstract
The voltage dependences of the shear modulus and its associated internal friction of NbSe3 and TaS3 are compared with each other, and with that of the Young's moduli. Much smaller and sharper anomalies are observed at the threshold field for NbSe3 than for TaS3, with considerable changes below threshold in the former. The magnitude of the anomalies in NbSe3 vary with the threshold field. Considerable variation in the behavior of the internal friction, depending on mode and CDW state, is observed.
Original language | English |
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Pages (from-to) | 271-278 |
Number of pages | 8 |
Journal | Synthetic Metals |
Volume | 29 |
Issue number | 2-3 |
DOIs | |
State | Published - Mar 21 1989 |
Bibliographical note
Funding Information:ACKNOWLEDGEMENTS We thank J. Tucker and R. Thorne of the University of Illinois for providing some samples, and G. Minton for assisting in our sample preparation. This research was supported in part by the U.S. National Science Foundation, Solid State Physics, Grant #DMR-8615463.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry