Si 3N 4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

D. M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, H. Morkoc

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Si 3N 4 has been produced on GaAs with low interface trap densities by electron cyclotron resonance N 2-He plasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400 °C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometric Si 3N 4. The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12-18 Å to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of 3.0 X 10 11 eV -1 cm -2 when nitrided at 150 °C. At 400 °C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving the Si 3N 4 in direct contact with the GaAs.

Original languageEnglish
Pages (from-to)507-510
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number2
StatePublished - Mar 1998

Bibliographical note

Funding Information:
This work was funded by the Air Force Office of Scientific Research (AFOSR) and Air Force Research Laboratory (AFRL). This research was performed while Brent Rankin held a National Research Council Research Associateship Award at the Air Force Research Laboratory. The authors would like to thank Justin Goeffena, Amy Lynch, Curtis Rice, and Paul West for their contributions to this work.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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